Quantum effects in magnetotransport of InGaAs quantum wells with remote Mn impurities

We have studied magnetoresistance and Hall effect of GaAs/InxGa1−xAs quantum wells with remote Mn impurity. Temperature and magnetic field dependencies of samples resistivity indicate several effects related to the magnetic subsystem. Shubnikov - de Haas oscillations indicate the presence of several types of regions in conduction channel with significantly different hole mobilities. We discussed the impact of magnetic impurities on quantum corrections to conductivity by comparing our results with the data for similar non-magnetic structures. Our results suggest that the presence of Mn atoms leads to the damping of quantum corrections in in the investigated structures

Quantum effects in magnetotransport of InGaAs quantum wells with remote Mn impurities

We have studied magnetoresistance and Hall effect of GaAs/InxGa1−xAs quantum wells with remote Mn impurity. Temperature and magnetic field dependencies of samples resistivity indicate several effects related to the magnetic subsystem. Shubnikov - de Haas oscillations indicate the presence of several types of regions in conduction channel with significantly different hole mobilities. We discussed the impact of magnetic impurities on quantum corrections to conductivity by comparing our results with the data for similar non-magnetic structures. Our results suggest that the presence of Mn atoms leads to the damping of quantum corrections in in the investigated structures

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)1−x(MnSb)x alloy

We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition using the eutectic compound (GaSb)0.59(MnSb)0.41 as target for sputtering. For the studied films we have observed ferromagnetism and an anomalous Hall effect above room temperature, confirming the presence of spin-polarized carriers. Electron microscopy, atomic and magnetic force microscopy results suggest that the films under study have a homogenous columnar structure in the bulk while MnSb inclusions accumulate near the surface. This is in good agreement with the high mobility values of charge carriers. Based on our data we conclude that the magnetic and magnetotransport properties of the films at room temperature are defined by the MnSb inclusions