CMOS-compatible multi-band plasmonic TE-pass polarizer

A CMOS-compatible plasmonic TE-pass polarizer capable of working in the O, E,S, C, L, and U bands is numerically analyzed. The device is based on an integrated hybrid plasmonic waveguide (HPW) with a segmented metal design. The segmented metal will avoid the propagation of the TM mode, confined in the slot of the HPW, while the TE fundamental mode will pass. The TE mode is not affected by the metal segmentation since it is confined in the core of the HPW. The concept of the segmented metal can be exploited in a plasmonic circuit with HPWs as the connecting waveguides between parts of the circuit and in a silicon photonics circuit with strip or slab waveguides connecting the different parts of the circuit. Using 3D FDTD simulations, it is shown that for a length of 5.5 μm the polarization extinction ratios are better than 20 dB and the insertion losses are less than 1.7dB over all the optical communication bands

Experimental parametric study of 128 Gb/s PAM-4 transmission system using a multi-electrode silicon photonic Mach Zehnder modulator

We present an experimental study and analysis of a travelling wave series push-pull silicon photonic multi-electrode Mach-Zehnder modulator (ME-MZM) and compare its performance with a single-electrode travelling wave Mach-Zehnder modulator (TWMZM). Utilizing the functionality of the ME-MZM structure plus digital-signal-processing, we report: 1) the C-band transmission of 84 Gb/s OOK modulated data below the KP4 forward error correction threshold with 2 Vpp drive voltage over a distance of 2 km; 2) the transmission of a 128 Gb/s optical 4-level pulse amplitude modulated signal over 1 km of fiber; and 3) the generation of a 168 Gb/s PAM-4 signal using two electrical OOK signals. By comparing the transmission system performance measurements for the ME-MZM with measurements performed using a similar series push-pull TWMZM, we show that the ME-MZM provides a clear advantage in achieving higher baud PAM-4 generation and transmission compared to a TWMZM

A CMOS compatible ultracompact silicon photonic optical add-drop multiplexer with misaligned Sidewall Bragg gratings

We experimentally and via simulations demonstrate ultracompact single-stage and cascaded optical add-drop multiplexers using misaligned sidewall Bragg grating in a Mach-Zehnder interferometer for the silicon-on-insulator platform. The single-stage configuration has a device footprint of 400 μm × 90 μm, and the cascaded configuration has a footprint of 400 μm × 125 μm. The proposed designs have 3-dB bandwidths of 6 nm and extinction ratios of 25 dB and 51 dB, respectively, and have been fabricated for the transverse electric mode. A minimum lithographic feature size of 80 nm is used in our design, which is within the limitation of 193 nm deep ultraviolet lithography

200 Gb/s transmission using a dual-polarization O-Band silicon photonic intensity modulator for Stokes vector direct detection applications

We present a dual-polarization O-band silicon photonic (SiP) transmitter for intra-datacenter optical interconnects. The transmitter is built using two identical O-band traveling wave Mach-Zehnder modulators with an average VπL and a bandwidth at 1.5 V bias voltage of 2.88 V.cm and 24.5 GHz, respectively. We experimentally demonstrate the transmitter in a Stokes vector direct-detection (SV-DD) system for dual-polarization intensity modulated signals with 2-level and 4-level pulse amplitude modulation (DP-PAM2 and DP-PAM4) formats. The direct-detection Stokes vector receiver (DD-SVR) followed by offline digital signal processing (DSP) is implemented for SOP de-rotation. We characterize the performance of the SV-DD system versus number of taps, received signal power, state of polarization (SOP), reach, and bit rate. Results reveal that 112 Gb/s DP-PAM2 can be transmitted over 10 km of single mode fiber (SMF) at a bit error rate (BER) below 10−5 at −1 dBm received signal power irrespective of the SOP. Moreover, a 168 Gb/s (42 Gbaud) DP-PAM4 signal can be transmitted over 2 km and 10 km at a BER below the 7% hard-decision forward error correction (HD-FEC) threshold (i.e., 3.8 × 10−3) at 0 dBm and 2 dBm, respectively. Furthermore, 224 Gb/s and 200 Gb/s DP-PAM4 are successfully received at a BER below the HD-FEC in the back-to-back and 2 km cases, respectively. Finally, we compare the performance of the 6 × 2 multiple-input multiple-output (MIMO) equalization to a simpler 4 × 2 MIMO equalization and explain the superior performance of the 6 × 2 in the presence of SVR imperfections

Silicon photonic mach-zehnder modulator architectures for on chip PAM-4 signal generation and transmission

Four level pulse amplitude modulation (PAM-4) has become the modulation format of choice to replace on-off keying (OOK) for the 400 Gb/s short reach optical communications systems. In this manuscript, we investigate the possible modifications to conventional Mach-Zehnder modulator structures to improve the system performance. We present 3 different Silicon photonic Mach-Zehnder modulator architectures for generating PAM-4 in the optical domain using OOK electrical driving signals. We investigate the transfer function and linearity of each modulator, and experimentally compare their PAM-4 generation and transmission performance with and without use of digital signal processing (DSP). We achieve the highest reported PAM-4 generation and transmission without the use of DSP. The power consumption of each modulator is presented, and we experimentally show that multi-electrode Mach-Zehnder modulators provide a clear advantage at higher symbol rates compared to conventional Mach-Zehnder modulators

Polarization-independent mode-evolution-based coupler for the silicon-on-insulator platform

We demonstrate a polarization-independent mode-evolution-based coupler for the silicon-on-insulator platform. The measured coupler has negligible insertion loss over a bandwidth of about 100 nm, i.e., from 1500 to 1600 nm. The measured maximum power imbalances for the polarization-independent coupler are 1.2 and 0.2 dB for the fundamental transverse electric (TE00) mode and the fundamental transverse magnetic (TM00) mode, respectively. Our coupler also has a compact design footprint with mode-evolution region not more than 75−μm long