Characterization of a Miniature Electron Energy Analyzer for Scanning Electron Microscopes

We report the design and experimental characterisation of a miniature detector for the scanning electron microscope based on the Bessel Box (BB) electron energy analyser which has a simple cylindrical geometry. We report on the simulation and operation of a prototype BB. The energy resolution of a single BB has been numerically calculated and experimentally characterised to be < 1%. This miniature electron detector is designed to be used close to the sample, alleviating the effects of the ambient electrostatic and magnetic fields

Hallmark of quantum skipping in energy filtered lensless scanning electron microscopy

We simulate the electronic system of ejected electrons arising when a tip, positioned few 10 amp; 8201;nm away from a surface, is operated in the field emission regime. We find that, by repeated quantum reflections quantum skipping , electrons produced at the nanoscale primary site are able to reach the macroscopic environment surrounding the tip surface region. We observe the hallmark of quantum skipping in an energy filtered experiment that detects the spin of the ejected electron

Comparative study of image contrast in scanning electron microscope and helium ion microscope

Images of Ga(+) -implanted amorphous silicon layers in a 110 n-type silicon substrate have been collected by a range of detectors in a scanning electron microscope and a helium ion microscope. The effects of the implantation dose and imaging parameters (beam energy, dwell time, etc.) on the image contrast were investigated. We demonstrate a similar relationship for both the helium ion microscope Everhart-Thornley and scanning electron microscope Inlens detectors between the contrast of the images and the Ga(+) density and imaging parameters. These results also show that dynamic charging effects have a significant impact on the quantification of the helium ion microscope and scanning electron microscope contrast

On the imaging of semiconductor doping using low energy electron microscopy

Regions of n + and p + semiconductors doped to 2.5x10 20 and 80x10 19 cm -3 respectively on n-type silicon substrate have been imaged in a scanning electron microscope modified for use into a cathode lens mode operating in the region of 1-10000 eV. The highest contrast with respect to that of the n-type silicon has been obtained from the n + region followed by the p + . Further, the n+ shows a maximum contrast at about 5-20 eV, while the contrast from the p+ area shows a maximum at about 300 eV