Optical and electrical properties of Sn-Sb-Se chalcogenide thin films

The optical and electrical properties of the as-prepared and annealed SnxSb20Se$_{80-x}$ (where x = 8, 10, 12, 13.5, 15, 16.5 and 18 at.%) thin films were studied. X-ray diffraction showed that all the as-prepared Sn-Sb-Se films were amorphous. Annealing the films at 473 K or above crystallized the films and the degree of crystallinity depended on the Sn content. The optical transmittance and reflectance were measured in the wavelength rang 200–2500 nm. The estimated optical band gap was found to decrease with increasing Sn content. A great difference in the optical constants values due to transformation from amorphous to crystalline phase structure of the films were found after annealing. This is advantageous for optical disk data storage applications. It was found that the resistivity decreases with increasing temperature for all the compositions indicating that these films have a semiconducting behavior with thermally activated conduction. The conduction in these films was suggested to be thermally assisted charge carrier movement in the extended states. Annealing the films caused a reduction in the room temperature resistivity by six order of magnitude. This was ascribed to the amorphous-crystalline transformation

Annealing and thickness effects on some electrical and optical properties of Sb:SnO

Effects of annealing and film thickness on the electrical and optical properties of Sb:SnO2 films deposited by electron beam from bulk samples prepared using sintering technique have been investigated. A compromise between low resistivity and high transparency of the film has been studied using the factor of merit. This factor, which has been found maximum for film 100 nm thick annealed at 550 °C for 15 min, seemed to be enhanced with increasing annealing time and/or film thickness confirming the simultaneous improvements of transparency and conductance with the latters. Other optical and electrical parameters such as refractive index, width of energy gap, density of localized states, concentration and mobility of carriers and Seebeck coefficient have been studied also, discussed and correlated to the microstructure changes with annealing and film thickness

Optical Properties of In-Ge-Se Thin Films

Effect of composition and annealing temperature on the optical properties of In 8 Ge x Se 92-x ( 14 ≤ x ≤ 25.5) thin films deposited by electron beam from bulk samples prepared using melt quench technique are investigated and discussed. All films have amorphous structure. It was found that the electronic energy gap E g increases with increasing Ge contents and has an ubrupt change at coordination number Z≥2.65. The ratio of free carrier concentration to the carrier effective mass ( N/m * ) and the high frequency dielectric constant ε ∞ showed also uprupt change at Z ≥2.65. The optical relaxation time τ found to have a minimum value at Z = 2.65. The optical energy gap E g found to be affected by annealing