APPLICATION OF RECURSIVE PARTITIONING TO AGRICULTURAL CREDIT SCORING

Recursive Partitioning Algorithm (RPA) is introduced as a technique for credit scoring analysis, which allows direct incorporation of misclassification costs. This study corroborates nonagricultural credit studies, which indicate that RPA outperforms logistic regression based on within-sample observations. However, validation based on more appropriate out-of-sample observations indicates that logistic regression is superior under some conditions. Incorporation of misclassification costs can influence the creditworthiness decision.finance, credit scoring, misclassification, recursive partitioning algorithm, Agricultural Finance,

Stratigraphy, age, and provenance of the Eocene Chumstick basin, Washington Cascades; implications for paleogeography, regional tectonics, and development of strike-slip basins: Reply

We welcome the comment by Evans (2022) and the opportunity to further discuss our study of the Chumstick Formation. The correlation of fault-bound nonmarine sedimentary units in central and western Washington has been a topic of interest, and debate, for many years (Frizzell, 1979; Taylor et al., 1988; Gresens et al., 1981; Gresens, 1983; Evans and Johnson, 1989; Evans, 1994; Cheney and Hayman, 2009). However, many questions about the regional correlation of these units were resolved with the publication of a suite of internally consistent high-precision 206Pb/238U zircon dates from volcanic interbeds throughout the early to middle Eocene stratigraphy (Eddy et al., 2016). This data set confirmed the timing of sediment deposition of the different members within the Chumstick Formation. Donaghy et al. (2021) provides a detailed study of the Chumstick Formation, which builds on earlier research by Gresens et al. (1981, 1983), McClincy (1986), and Evans (1994) by incorporating new geochronologic information and additional clast counts, detrital zircon geochronology, and facies mapping. We interpret large parts of the Chumstick Formation to represent a spatially and temporally distinct sedimentary system between the Leavenworth and Entiat fault zones that likely formed as a pull-apart basin. Evans (2022) objects to several of the interpretations presented in Donaghy et al. (2021) regarding the relationship between different members of the Chumstick Formation and surrounding sedimentary units, the timing of strike-slip faulting, and the regional tectonic setting of these rocks. We discuss each of these points in the following sections

Eocene dike orientations across the Washington Cascades in response to a major strike-slip faulting episode and ridge-trench interaction

The northern Cascade Mountains in Washington (USA) preserve an exceptional shallow to mid-crustal record of Eocene transtension marked by dextral strike-slip faulting, intrusion of dike swarms and plutons, rapid non-marine sedimentation, and ductile flow and rapid cooling in parts of the North Cascades crystalline core. Transtension occurred during ridge-trench interaction with the formation of a slab window, and slab rollback and break-off occurred shortly after collision of the Siletzia oceanic plateau at ca. 50 Ma. Dike swarms intruded a \u3e1250 km2 region between ca. 49.3 Ma and 44.9 Ma, and orientations of more than 1500 measured dikes coupled with geochronologic data provide important snapshots of the regional strain field. The mafic Teanaway dikes are the southernmost and most voluminous of the swarms. They strike NE (mean = 036°) and average ~15 m in thickness. To the north, rhyolitic to basaltic dikes overlap spatially with 49.3-46.5 Ma, mainly granodioritic plutons, but they typically predate the nearby plutons by ca. 500 k.y. The average orientations of five of the six dike domains range from 010° to 058°; W-NW- to NW-striking dikes characterize one domain and are found in lesser amounts in a few other domains. Overall, the mean strike for all Eocene dikes is 035°, and the average extension direction (305°-125°) is oblique to the strike (~320°) of the North Cascades orogen. Extension by diking reached ~45% in one \u3e7-km-long transect through the Teanaway swarm and ranged from ~5% to locally ~79% in shorter transects across other swarms, which corresponds to a minimum of ~12 km of extension. The dominant NE-striking dikes are compatible with the dextral motion on the N- to NW-striking (~355-320°) regional strike-slip faults. Some of the W-NW- to NW-striking dikes were arguably influenced by pre-existing faults, shear fractures, and foliations, and potentially in one swarm where both NE-and lesser W-NW-striking dikes are present, by a switch in principal stress axes induced by dike emplacement. Alternatively, the W-NW- to NW-striking dikes may reflect a younger regional strain field, as ca. 49.3-47.5 Ma U-Pb zircon ages of the NE-striking dikes are older than those of the few dated W-NW- to NW-trending dikes. In one scenario, NE-striking dikes intruded during an interval when strain mainly reflected dextral strike-slip faulting, and the younger dikes record a switch to more arc-normal extension. Diking ended as magmatism migrated into a N-S-trending belt west of the North Cascades core that marks the initiation of the ancestral Cascade arc

Fusion products, Kostka polynomials, and fermionic characters of su(r+1)_k

Using a form factor approach, we define and compute the character of the fusion product of rectangular representations of \hat{su}(r+1). This character decomposes into a sum of characters of irreducible representations, but with q-dependent coefficients. We identify these coefficients as (generalized) Kostka polynomials. Using this result, we obtain a formula for the characters of arbitrary integrable highest-weight representations of \hat{su}(r+1) in terms of the fermionic characters of the rectangular highest weight representations.Comment: 21 pages; minor changes, typos correcte

A solid-state source of single and entangled photons at diamond SiV−^--center transitions operating at 80K

Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices incorporating the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 $\pm$ 1.7 nm) close to the zero-phonon line of Silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 $\pm$ 0.09). High single photon purity is maintained from 4 K (g$^($$^2$$^)$(0) = 0.07 $\pm$ 0.02) up to 80 K (g$^($$^2$$^)$(0) = 0.11 $\pm$ 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications

Local droplet etching on InAlAs/InP surfaces with InAl droplets

GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs. These properties make GaAs QDs an ideal candidate as single photon and entangled photon sources at short wavelengths (<800 nm). For technologically important telecom wavelengths, however, it is still unclear whether LDE grown QDs can be realized. Controlling the growth conditions does not enable shifting the wavelength of GaAs QDs to the telecom region. New recipes will have to be established. In this work, we study Indium–Aluminum (InAl) droplet etching on ultra-smooth In0.55Al0.45As surfaces on InP substrates, with a goal to lay the foundation for growing symmetrical and strain-free telecom QDs using the LDE method. We report that both droplets start to etch nanoholes at a substrate temperature above 415 °C, showing varying nanohole morphology and rapidly changing density (by more than one order of magnitude) at different temperatures. Al and In droplets are found to not intermix during etching, and instead etch nanoholes individually. The obtained nanoholes show a symmetric profile and very low densities, enabling infilling of lattice-matched InGaAs QDs on InxAl1−xAs/InP surfaces in further works

Statistical limits for entanglement swapping with semiconductor entangled photon sources

Semiconductor quantum dots are promising building blocks for quantum communication applications. Al- though deterministic, efficient, and coherent emission of entangled photons has been realized, implementing a practical quantum repeater remains outstanding. Here we explore the statistical limits for entanglement swapping with sources of polarization-entangled photons from the commonly used biexciton-exciton cascade. We stress the necessity of tuning the exciton fine structure, and explain why the often observed time evolution of photonic entanglement in quantum dots is not applicable for large quantum networks. We identify the critical, statistically distributed device parameters for entanglement swapping based on two sources. A numerical model for benchmarking the consequences of device fabrication, dynamic tuning techniques, and statistical effects is developed, in order to bring the realization of semiconductor-based quantum networks one step closer to reality. ©2022 American Physical Societ