Broadband SNAIL parametric amplifier with microstrip impedance transformer

Josephson parametric amplifiers have emerged as a promising platform for quantum information processing and squeezed quantum states generation. Travelling wave and impedance-matched parametric amplifiers provide broad bandwidth for high-fidelity single-shot readout of multiple qubit superconducting circuits. Here, we present a quantum-limited 3-wave-mixing parametric amplifier based on superconducting nonlinear asymmetric inductive elements (SNAILs), whose useful bandwidth is enhanced with an on-chip two-section impedance-matching circuit based on microstrip transmission lines. The amplifier dynamic range is increased using an array of sixty-seven SNAILs with 268 Josephson junctions, forming a nonlinear quarter-wave resonator. Operating in a current-pumped mode, we experimentally demonstrate an average gain of $17 dB$ across $300 MHz$ bandwidth, along with an average saturation power of $- 100 dBm$, which can go as high as $- 97 dBm$ with quantum-limited noise performance. Moreover, the amplifier can be fabricated using a simple technology with just a one e-beam lithography step. Its central frequency is tuned over a several hundred megahertz, which in turn broadens the effective operational bandwidth to around $1.5 GHz$.Comment: 7 pages, 3 figure

High-Q trenched aluminum coplanar resonators with an ultrasonic edge microcutting for superconducting quantum devices

Dielectric losses are one of the key factors limiting the coherence of superconducting qubits. The impact of materials and fabrication steps on dielectric losses can be evaluated using coplanar waveguide (CPW) microwave resonators. Here, we report on superconducting CPW microwave resonators with internal quality factors systematically exceeding 5x106 at high powers and 2x106 (with the best value of 4.4x106) at low power. Such performance is demonstrated for 100-nm-thick aluminum resonators with 7-10.5 um center trace on high-resistivity silicon substrates commonly used in quantum Josephson junction circuits. We investigate internal quality factors of the resonators with both dry and wet aluminum etching, as well as deep and isotropic reactive ion etching of silicon substrate. Josephson junction compatible CPW resonators fabrication process with both airbridges and silicon substrate etching is proposed. Finally, we demonstrate the effect of airbridges positions and extra process steps on the overall dielectric losses. The best quality fa ctors are obtained for the wet etched aluminum resonators and isotropically removed substrate with the proposed ultrasonic metal edge microcutting.Comment: 6 pages, 2 figure

Sputtered NbN Films for Ultrahigh Performance Superconducting Nanowire Single-Photon Detectors

Nowadays ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning of superconducting material properties is a powerful resource for fabricating single-photon detectors with a desired properties. Here, we report on the major theoretical relations between ultrathin niobium nitride (NbN) films properties and superconducting nanowire single-photon detectors characteristics, as well as ultrathin NbN films properties dependence on reactive magnetron sputtering recipes. Based on this study we formulate the exact requirements to ultrathin NbN films for ultrahigh performance superconducting nanowire single-photon detectors. Then, we experimentally study ultrathin NbN films properties (morphology, crystalline structure, critical temperature, sheet resistance) on silicon, sapphire, silicon dioxide and silicon nitride substrates sputtered with various recipes. We demonstrate ultrathin NbN films (obtained with more than 100 films deposition) with a wide range of critical temperature from 2.5 to 12.1 K and sheet resistance from 285 to 2000 ~$\Omega$/sq, as well as investigate a sheet resistance evolution over for more than 40\% within two years. Finally, we found out that one should use ultrathin NbN films with specific critical temperature near 9 K and sheet resistance of 400 ~$\Omega$/sq for ultrahigh performance SNSPD.Comment: The following article has been submitted to APL Materials. After it is published, it will be found at https://pubs.aip.org/aip/apm. Copyright 2023 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) Licens

Robust cryogenic matched low-pass coaxial filters for quantum computing applications

Electromagnetic noise is one of the key external factors decreasing superconducting qubits coherence. Matched coaxial filters can prevent microwave and IR photons negative influence on superconducting quantum circuits. Here, we report on design and fabrication route of matched low-pass coaxial filters for noise-sensitive measurements at milliKelvin temperatures. A robust transmission coefficient with designed linear absorption (-1dB/GHz) and ultralow reflection losses less than -20 dB up to 20 GHz is achieved. We present a mathematical model for evaluating and predicting filters transmission parameters depending on their dimensions. It is experimentally approved on two filters prototypes different lengths with compound of Cu powder and Stycast commercial resin demonstrating excellent matching. The presented design and assembly route are universal for various compounds and provide high repeatability of geometrical and microwave characteristics. Finally, we demonstrate three filters with almost equal reflection and transmission characteristics in the range from 0 to 20 GHz, which is quite useful to control multiple channel superconducting quantum circuits.Comment: 5 pages, 4 figure

Sputtered NbN films for ultrahigh performance superconducting nanowire single-photon detectors

At the present time, ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning of superconducting material properties is a powerful resource for fabricating single-photon detectors with desired properties. Here, we report on the major theoretical relations between ultrathin niobium nitride (NbN) film properties and superconducting nanowire single-photon detector characteristics, as well as the dependence of ultrathin NbN film properties on reactive magnetron sputtering recipes. Based on this study, we formulate the exact requirements for ultrathin NbN films for ultrahigh performance superconducting nanowire single-photon detectors. Then, we experimentally studied the properties of ultrathin NbN films (morphology, crystalline structure, critical temperature, and sheet resistance) on silicon, sapphire, silicon dioxide, and silicon nitride substrates sputtered with various recipes. We demonstrate ultrathin NbN films (obtained with more than 100 films deposition) with a wide range of critical temperature from 2.5 to 12.1 K and sheet resistance from 285 to 2000 Ω/sq and report a sheet resistance evolution of more than 40% within two years. Finally, we found out that one should use ultrathin NbN films with a specific critical temperature near 9.5 K and a sheet resistance of about 350 Ω/sq for ultrahigh performance state-of-the-art superconducting nanowire single-photon detectors at 1550 nm wavelength

High-Q trenched aluminum coplanar resonators with an ultrasonic edge microcutting for superconducting quantum devices

Abstract Dielectric losses are one of the key factors limiting the coherence of superconducting qubits. The impact of materials and fabrication steps on dielectric losses can be evaluated using coplanar waveguide (CPW) microwave resonators. Here, we report on superconducting CPW microwave resonators with internal quality factors systematically exceeding 5 × 106 at high powers and 2 × 106 (with the best value of 4.4 × 106) at low power. Such performance is demonstrated for 100-nm-thick aluminum resonators with 7–10.5 um center trace on high-resistivity silicon substrates commonly used in Josephson-junction based quantum circuit. We investigate internal quality factors of the resonators with both dry and wet aluminum etching, as well as deep and isotropic reactive ion etching of silicon substrate. Josephson junction compatible CPW resonators fabrication process with both airbridges and silicon substrate etching is proposed. Finally, we demonstrate the effect of airbridges’ positions and extra process steps on the overall dielectric losses. The best quality factors are obtained for the wet etched aluminum resonators and isotropically removed substrate with the proposed ultrasonic metal edge microcutting