Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon

In this article, we report the optimization of ohmic contact formation on AlGaN/GaN on low-resistivity silicon. For achieving this, a strategy of uneven AlGaN/GaN was introduced through patterned etching of the substrate under the contact. Various pattern designs (holes, horizontal lines, vertical lines, grid) and varied etch depth (above and below the 2-D electron gas) were investigated. Furthermore, a study of planar and nonplanar ohmic metallization was investigated. Compared to a traditional fabrication strategy, we observed a reduced contact resistance from 0.35 to 0.27 Ω · mm by employing a grid etching approach with a “below channel” etch depth and nonplanar ohmic metallization. In general, measurements of “below channel” test structures exhibited improved contact resistance compared to “above channel” in both planar and nonplanar ohmic metallizatio

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon.

The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) silicon substrate itself has been long held responsible for the suboptimal efficiency of as-grown GaN high electron mobility transistors (HEMTs) at higher operating frequencies. Here, we reveal that not one but two discrete channels distinguishable by their carrier type, spatial extent, and origin within the metal-organic vapor phase epitaxy (MOVPE) growth process participate in such parasitic substrate conduction. An n-type layer that forms first is uniformly distributed in the substrate, and it has a purely thermal origin. Alongside this, a p-type layer is localized on the substrate side of the AlN/Si interface and is induced by diffusion of group-III element of the metal-organic precursor. Fortunately, maintaining the sheet resistance of this p-type layer to high values (∼2000 Ω/□) seems feasible with particular durations of either organometallic precursor or ammonia gas predose of the Si surface, i.e., the intentional introduction of one chemical precursor just before nucleation. It is proposed that the mechanism behind the control actually relies on the formation of disordered AlSiN between the crystalline AlN nucleation layer and the crystalline silicon substrate.This research was supported by the Engineering and Physical Sciences Research Council (EPSRC) under the grant InGaNET, ‘Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates’ (EP/N017927/1) and (EP/N014820/2). David Wallis acknowledges the support of EPSRC fellowship (EP/N01202X/2)