Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructure

We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O-3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694016]open112117sciescopu