6 research outputs found
Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices
Optimization of Dynamic Source Resistance in a β-Ga2O3 HEMT and Its Effect on Electrical Characteristics
Determination of the Faraday rotation perpendicular to the optical axis in uniaxial CeF3 crystal by using the Generalized-High Accuracy Universal Polarimeter
Synthesis and characterization of silicon-doped gallium oxide nanowires for optoelectronic UV applications
Silicon-doped gallium oxide nanowires have been synthesized by thermal methods using either a mixture of gallium oxide and silicon powders or metallic gallium with silicon powder as precursor materials. The growth mechanism has been found to be a vapour-liquid-solid (VLS) or vapour-solid (VS) process, respectively, depending on the precursor used. In the former case, silicon oxide droplets at the end of the nanowires have been observed. Their possible role during the growth of the nanostructures is discussed. Structural and morphological characterization of the doped nanowires has been performed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The results show a high crystalline quality and a uniform distribution of silicon along the nanowires. Room temperature cathodoluminescence (CL) in the SEM shows that slight variations in the composed UV-blue emission band appear due to the influence of Si impurities in the oxygen vacancy defect structure