41 research outputs found

    Evaluation of a computer-assisted errorless learning-based memory training program for patients with early Alzheimer's disease in Hong Kong : a pilot study

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    2012-2013 > Academic research: refereed > Publication in refereed journalVersion of RecordSelf-fundedPublishe

    Meta-Stable DIP (MSD) Effect in Fully-Depleted SOI CMOSFETs

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    The I-V characteristics and the transconductance of fully depleted MOSFETs can display time-dependent hysteresis when one interface is scanned to or from accumulation, the other interface being in inversion. This new memory effect, called Meta-Stable Dip (MSD), is mainly due to the high carrier lifetime in the silicon film. In this work, we show that the MSD effect can be generalized to several fully depleted technologies. MSD is systematically analyzed for various measurement conditions and devices with different doping including p-MOSFETs, front oxide thickness and silicon film thicknesses
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