2 research outputs found
Atomic layering at the liquid silicon surface: a first- principles simulation
We simulate the liquid silicon surface with first-principles molecular
dynamics in a slab geometry. We find that the atom-density profile presents a
pronounced layering, similar to those observed in low-temperature liquid metals
like Ga and Hg. The depth-dependent pair correlation function shows that the
effect originates from directional bonding of Si atoms at the surface, and
propagates into the bulk. The layering has no major effects in the electronic
and dynamical properties of the system, that are very similar to those of bulk
liquid Si. To our knowledge, this is the first study of a liquid surface by
first-principles molecular dynamics.Comment: 4 pages, 4 figures, submitted to PR