Large thermal Hall coefficient in bismuth

We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.Comment: 4pages, 3 figure

The sign of charge carriers in luminescent transitions

A thorough treatment of the luminescent mechanisms in high resistivity semiconductors (up to 10 12 ohm cm), has as yet not been satisfactorily established. This is due to the lack of data as is provided by the Hall effect. An AC-AC Hall apparatus has been assembled to determine the sign of charge carriers, and their densities when involved in luminescent transitions. Results of preliminary measurements on CdS will be presented.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/42575/1/10582_2005_Article_BF01699279.pd