Carrier relaxation mechanisms in self-assembled (In,Ga)As/GaAs quantum dots: Efficient P -> S Auger relaxation of electrons

We calculate the P-shell--to-S-shell decay lifetime \tau(P->S) of electrons in lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-hole scattering within an atomistic pseudopotential-based approach. We find that this relaxation mechanism leads to fast decay of \tau(P->S)~1-7 ps for dots of different sizes. Our calculated Auger-type P-shell--to-S-shell decay lifetimes \tau(P->S) compare well to data in (In,Ga)As/GaAs dots, showing that as long as holes are present there is no need for an alternative polaron mechanism.Comment: Version published in Phys. Rev.

Intersublevel Polaron Dephasing in Self-Assembled Quantum Dots

Polaron dephasing processes are investigated in InAs/GaAs dots using far-infrared transient four wave mixing (FWM) spectroscopy. We observe an oscillatory behaviour in the FWM signal shortly (< 5 ps) after resonant excitation of the lowest energy conduction band transition due to coherent acoustic phonon generation. The subsequent single exponential decay yields long intraband dephasing times of 90 ps. We find excellent agreement between our measured and calculated FWM dynamics, and show that both real and virtual acoustic phonon processes are necessary to explain the temperature dependence of the polarization decay.Comment: 10 pages, 4 figures, submitted to Phys Rev Let

High Purcell factor generation of indistinguishable on-chip single photons

On-chip single-photon sources are key components for integrated photonic quantum technologies. Semiconductor quantum dots can exhibit near-ideal single-photon emission, but this can be significantly degraded in on-chip geometries owing to nearby etched surfaces. A long-proposed solution to improve the indistinguishablility is to use the Purcell effect to reduce the radiative lifetime. However, until now only modest Purcell enhancements have been observed. Here we use pulsed resonant excitation to eliminate slow relaxation paths, revealing a highly Purcell-shortened radiative lifetime (22.7 ps) in a waveguide-coupled quantum dot–photonic crystal cavity system. This leads to near-lifetime-limited single-photon emission that retains high indistinguishablility (93.9%) on a timescale in which 20 photons may be emitted. Nearly background-free pulsed resonance fluorescence is achieved under π-pulse excitation, enabling demonstration of an on-chip, on-demand single-photon source with very high potential repetition rates

Intermediate-band dynamics of quantum dots solar cell in concentrator photovoltaic modules

We report for the first time a successful fabrication and operation of an InAs/GaAs quantum dot based intermediate band solar cell concentrator photovoltaic (QD-IBSC-CPV) module to the IEC62108 standard with recorded power conversion efficiency of 15.3%. Combining the measured experimental results at Underwriters Laboratory (ULH) licensed testing laboratory with theoretical simulations, we confirmed that the operational characteristics of the QD-IBSC-CPV module are a consequence of the carrier dynamics via the intermediate-band at room temperature

Dynamics of the Intraband Light Absorption in Selectively Doped GaAs/AlGaAs Quantum Wells

Spectral and temperature dependences of equilibrium and non-equi-intersubband light absorption in the mid-infrared spectral range were studied in selectively doped asymmetrical tunnel-coupled GaAs/AlGaAs quantum wells. The temporal evolution of the absorption studied by means of a picosecond pump-probe technique was found to have a biexponential character. The fast decay times are determined by intersubband electron relaxation due to electron scattering by optical phonons and impurities. The presence of long decay times in transient mid-infrared absorption is probably connected with electron transitions from the states in barrier (X and L valleys as well as deep centers) to the states of the quantum well. Experimentally determined intersubband scattering times are compared with the calculated ones

Dynamics of the Intraband Light Absorption in Selectively Doped GaAs/AlGaAs Quantum Wells

Spectral and temperature dependences of equilibrium and non-equi-intersubband light absorption in the mid-infrared spectral range were studied in selectively doped asymmetrical tunnel-coupled GaAs/AlGaAs quantum wells. The temporal evolution of the absorption studied by means of a picosecond pump-probe technique was found to have a biexponential character. The fast decay times are determined by intersubband electron relaxation due to electron scattering by optical phonons and impurities. The presence of long decay times in transient mid-infrared absorption is probably connected with electron transitions from the states in barrier (X and L valleys as well as deep centers) to the states of the quantum well. Experimentally determined intersubband scattering times are compared with the calculated ones