445 research outputs found

    Weak localization in macroscopically inhomogeneous two-dimensional systems: a simulation approach

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    A weak-localization effect has been studied in macroscopically inhomogeneous 2D system. It is shown, that although the real phase breaking length tends to infinity when the temperature tends to zero, such a system can reveal a saturated behavior of the temperature dependence of that parameter, which is obtained from the standard analysis of the negative magnetoresistance and usually identified by experimentalists with the phase braking length.Comment: 5 pages, 4 figure

    Bohr Hamiltonian with deformation-dependent mass term for the Kratzer potential

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    The Deformation Dependent Mass (DDM) Kratzer model is constructed by considering the Kratzer potential in a Bohr Hamiltonian, in which the mass is allowed to depend on the nuclear deformation, and solving it by using techniques of supersymmetric quantum mechanics (SUSYQM), involving a deformed shape invariance condition. Analytical expressions for spectra and wave functions are derived for separable potentials in the cases of gamma-unstable nuclei, axially symmetric prolate deformed nuclei, and triaxial nuclei, implementing the usual approximations in each case. Spectra and B(E2) transition rates are compared to experimental data. The dependence of the mass on the deformation, dictated by SUSYQM for the potential used, moderates the increase of the moment of inertia with deformation, removing a main drawback of the model.Comment: 27 pages, 6 figures, 8 tables. arXiv admin note: text overlap with arXiv:1103.593

    Interference quantum correction to conductivity of Al xGa 1-xAs/GaAs double quantum well heterostructures near the balance

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    We present the results of experimental investigations of the interference quantum correction to the conductivity of the gated double quantum well Al xGa 1-xAs/GaAs/Al xGa 1-xAs heterostructures. Analyzing the positive magnetoconductiv-ity we obtain the interwell transition rate and the phase relaxation rate under the conditions when one and two quantum wells are occupied. It has been found that the interwell transition rate resonantly depends on the difference between the electron densities in the wells in accordance with the theoretical estimate. The central point, however, is that the dephasing rate in the lower quantum well is independent of whether the upper quantum well contributes to the conductivity or not. The results obtained are interpreted within framework of the recent theory for the dephasing and electron-electron interaction in the double well structures [Burmistrov I S, Gornyi I V and Tikhonov K S 2011 Phys. Rev. B 84 075338]

    The influence of an oscillating wall on the position of oblique shocks in a 2D channel

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    In the paper we solve the problem of supersonic gas flow in a two-dimensional channel with the moving upper wall making oscillations according to the harmonic law. In order to obtain a numerical solution for gas dynamics equations we have implemented two difference schemes: the scheme with the space and time approximation of the first order and the scheme with the space approximation of the second order. The fluxes were computed using Van Leer's method. A special form of fluxes in the gas dynamics equations is given, which enables to calculate fluxes on cell faces of difference mesh using Van Leer's method. Depending on a type of the harmonic law and initial gas inflow conditions, the peculiarities of oblique-shock wave propagation in moving curvilinear domains have been investigated. It has been determined that under a particular oscillation frequency the presence of wall oscillation practically doesn't have an effect on the flow regime inside the domain. The convergence of the obtained solution is shown by calculations using difference grids with different numbers of cells. While comparing the numerical solution obtained due to our program with the one obtained with Ansys Fluent solver we found that the constructed code operates correctly

    Quantum corrections to conductivity: from weak to strong localization

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    Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the conductivity is diffusive for kFl=252k_F l=25-2 and behaves like diffusive one for kFl=20.5k_F l=2-0.5 down to the temperature T=0.4 K. It has been therewith found that the quantum corrections are not small at low temperature when kFl1k_F l\simeq 1. They are close in magnitude to the Drude conductivity so that the conductivity σ\sigma becomes significantly less than e2/he^{2}/h (the minimal σ\sigma value achieved in our experiment is about 3×108Ω13\times 10^{-8}\Omega^{-1} at kFl0.5k_Fl\simeq 0.5 and T=0.46T=0.46 K). We conclude that the temperature and magnetic field dependences of conductivity in whole kFlk_Fl range are due to changes of quantum corrections.Comment: RevTex 4.0, 10 figures, 7 two-column page
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