Methane production by anaerobic digestion of algae 1.

editorial reviewedIt has been shown previously that marine algae Tetraselmis can be transformed into methane by a one step completely-mixed biomethanation process, in a reliable way and with good yields and good methane production rates. This process can be adapted to work equally well in sea water. Based on previous laboratory results, a pilot-scale 1 m**3 digester has been installed by the authors at Lamezia-Terme (Calabria, Italy). A biogas production rate of 1. 33 m**3 gas per m**3 digester and per day (66% methane) has been obtained with a volumetric loading rate of 4 kg volatile solids per m**3 digester and per day and a mean retention time of 14 days. A yield of 0. 25 m//3 methane per kg volatile solids added, has been obtained at a salt concentration of more than 10g sodium per liter with a volumetric loading rate of 3 kg volatile solids per m**3 digester and per day and 14 days of mean retention time

ALD La-based oxides for vt-tuning in high-k/metal gate stacks

Accurate thickness and composition control for ultra-thin films is demonstrated for the atomic layer deposition (ALD) of La2O 3 and HfLaO. Growth studies indicate a linear growth without substrate inhibition for La2O3 and HfLaO ALD on HfSiO and hydroxylated SiO2, respectively. Layer closure studies on HfSiO show a fast La2O3 layer closure. Vt-tuning in a high thermal budget NMOS transistor flow is established (i) by inserting sub-nm La2O3 capping layers between the HfSiON gate oxide and the TaCx metal electrode and (ii) by replacing the HfSiON gate oxide film by HfLaO. Changing the La2O3 capping layer thickness from 0 till 1 nm, results in tunable Vtshifts up to ∼ 600mV while retaining low equivalent oxide thickness (EOT), high mobility, and low gate leakage current. Hf-rich HfLaO gate dielectric layers resulted in a V t-shift of ∼ 250 mV and EOT values down to 1.1 nm. © The Electrochemical Society

ALD La-based oxides for vt-tuning in high-k/metal gate stacks

Accurate thickness and composition control for ultra-thin films is demonstrated for the atomic layer deposition (ALD) of La2O 3 and HfLaO. Growth studies indicate a linear growth without substrate inhibition for La2O3 and HfLaO ALD on HfSiO and hydroxylated SiO2, respectively. Layer closure studies on HfSiO show a fast La2O3 layer closure. Vt-tuning in a high thermal budget NMOS transistor flow is established (i) by inserting sub-nm La2O3 capping layers between the HfSiON gate oxide and the TaCx metal electrode and (ii) by replacing the HfSiON gate oxide film by HfLaO. Changing the La2O3 capping layer thickness from 0 till 1 nm, results in tunable Vtshifts up to ∼ 600mV while retaining low equivalent oxide thickness (EOT), high mobility, and low gate leakage current. Hf-rich HfLaO gate dielectric layers resulted in a V t-shift of ∼ 250 mV and EOT values down to 1.1 nm. © The Electrochemical Society