73 research outputs found
Quantum wire and quantum dot semiconductor lasers
There is currently great interest in fabrication of structures that are two and three dimensional analogs of the conventional quantum well. We review here the physics behind the use of arrays of such lower dimensional structures in semiconductor laser active layers. Methods which are currently under investigation for producing such structures will be discussed
Monolithic Schottky diode imaging arrays at 94 GHz
Monolithic GaAs Schottky diode imaging arrays have been demonstrated at 69 and 94 GHz. In the 94 GHz experiments, the diodes are fabricated by a self-aligning technique on semi-insulating GaAs and are isolated by a combination of a mesa-etch process and proton-bombardment. The series resistance is 20 Ï and the estimated capacitance is 15â20 fF. The antennas are planar bow-ties, and power is coupled in through a quartz lens placed on the back of the GaAs substrate. The wafer is lapped to 90 ÎŒm thick to eliminate losses to substrate modes. The measured system responsivity is 330 V/W. The 69 GHz diodes are made by a non-self-aligned process, and a silicon substrate lens is used
Quantum wire and quantum dot semiconductor lasers
There is currently great interest in fabrication of structures that are two and three dimensional analogs of the conventional quantum well. We review here the physics behind the use of arrays of such lower dimensional structures in semiconductor laser active layers. Methods which are currently under investigation for producing such structures will be discussed
Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 Ă 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices
Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder
Deep level transient spectroscopy assessment of silicon contamination in AlGaAs layers grown by metalorganic vapor phase epitaxy
Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder
- âŠ