An introduction to InP-based generic integration technology

Photonic integrated circuits (PICs) are considered as the way to make photonic systems or subsystems cheap and ubiquitous. PICs still are several orders of magnitude more expensive than their microelectronic counterparts, which has restricted their application to a few niche markets. Recently, a novel approach in photonic integration is emerging which will reduce the R&D and prototyping costs and the throughput time of PICs by more than an order of magnitude. It will bring the application of PICs that integrate complex and advanced photonic functionality on a single chip within reach for a large number of small and larger companies and initiate a breakthrough in the application of Photonic ICs. The paper explains the concept of generic photonic integration technology using the technology developed by the COBRA research institute of TU Eindhoven as an example, and it describes the current status and prospects of generic InP-based integration technology

An introduction to InP-based generic integration technology

Photonic integrated circuits (PICs) are considered as the way to make photonic systems or subsystems cheap and ubiquitous. PICs still are several orders of magnitude more expensive than their microelectronic counterparts, which has restricted their application to a few niche markets.Recently, a novel approach in photonic integration is emerging which will reduce the R&D and prototyping costs and the throughput time of PICs by more than an order of magnitude. It will bring the application of PICs that integrate complex and advanced photonic functionality on a single chip within reach for a large number of small and larger companies and initiate a breakthrough in the application of Photonic ICs. The paper explains the concept of generic photonic integration technology using the technology developed by the COBRA research institute of TU Eindhoven as an example, and it describes the current status and prospects of generic InP-based integration technology.Funding is acknowledged by the EU-projects ePIXnet, EuroPIC and PARADIGM and the Dutch projects NRC Photonics, MEMPHIS, IOP Photonic Devices and STW GTIP. Many others have contributed and the authors would like to thank other PARADIGM and EuroPIC partners for their help in discussions, particularly Michael Robertson (CIP).This is the final published version distributed under a Creative Commons Attribution License. It can also be viewed on the publisher's website at: http://iopscience.iop.org/0268-1242/29/8/08300

Complex Oxide Photonic Crystals

Microphotonics has been offering a body of ideas to prospective applicationsin optics. Among those, the concept of photonic integrated circuits (PIC’s) has recently spurred a substantial excitement into the scientific community. Relisation of the PIC’s becomes feasible as the size shrinkage of the optical elements is accomplished. The elements based on photonic crystals (PCs) represent promising candidacy for manufacture of PIC’s. This thesis is devoted to tailoring of optical properties and advanced modelling of two types of photonic crystals: (Bi3Fe5O12/Sm3Ga5O12)m and (TiO2/Er2O3)m potentially applicable in the role optical isolators and optical amplifiers, respectively. Deposition conditions of titanium dioxide were first investigated to maximise refractive index and minimise absorption as well as surface roughness of titania films. It was done employing three routines: deposition at elevated substrate temperatures, regular annealing in thermodynamically equilibrium conditions and rapid thermal annealing (RTA). RTA at 500 oC was shown to provide the best optical performance giving a refractive index of 2.53, an absorption coefficient of 404 cm−1 and a root-mean-square surface roughness of 0.6 nm. Advanced modelling of transmittance and Faraday rotation for the PCs (Bi3Fe5O12/Sm3Ga5O12)5 and (TiO2/Er2O3)6 was done using the 4 × 4 matrix formalism of Višňovský. The simulations for the constituent materials in the forms of single films were performed using the Swanepoel and Višňovský formulae. This enabled generation of the dispersion relations for diagonal and off-diagonal elements of the permittivity tensors relating to the materials. These dispersion relations were utilised to produce dispersion relations for complex refractive indices of the materials. Integration of the complex refractive indices into the 4 × 4 matrix formalism allowed computation of transmittance and Faraday rotation of the PCs. The simulation results were found to be in a good agreement with the experimental ones proving such a simulation approach is an excellent means of engineering PCs

Polarization converter in layer stacks of low contrast of refractive index for photonic integrated circuits

We report on design of a polarization converter for the InGaAsP-InP system. The polarization converter has a sloping sidewall made by wet chemical etching. Polarization conversion is higher than 95% and loss is lower than 0.5 dB for the following parameters of the converter: width of top, 1.24±0.06 µm; length, 275±32 µm; deviation of layer thicknesses of the converter stack, more than ±10%; wavelength range, 1.5-1.6 µm. This design of the converter is suitable for photonic integrated circuits based on layer stacks of low contrast of refractive index

Extremely efficient two-section polarization converter for InGaAsP-InP photonic integrated circuits

Polarization converters are important components to manipulate polarization in photonic integrated circuits [1]. Several polarization converters were reported [2-6]. Their problem is tight fabrication tolerances to have efficiency of polarization conversion more than 95 %. The authors of [7] suggested a way to improve the fabrication tolerances using a two-section polarization converter. This paper shows the first fabrication and measurements of the two-section polarization converter which confirms the result predicted in [7]

Improved fabrication process of low-loss and efficient polarization converters in InP-based photonic integrated circuits

We show an improved fabrication process of trapezoidal polarization converters for InP-based photonic integrated circuits. The new process has reduced complexity, and the fabricated converters have loss two times lower than reported previously. The measurements of the converters show an efficiency of polarization conversion of 97.9% at a wavelength of 1.535 µm and loss below 0.5 dB