Probing diffusion barrier integrity on porous silica low-k thin films using positron annihilation lifetime spectroscopy

The technique of positron annihilation lifetime spectroscopy (PALS) has been used to investigate the continuity and thermal stability of thin barrier layers designed to prevent Cu atom diffusion into porous silica, low-dielectric constant (k) films. Nanoglass™ K2.2-A10C (A10C), a porous organosilicate film, is determined to have interconnected pores with an average tubular-pore diameter of (6.9 ± 0.4) nm. Cu deposited directly on the A10C films is observed to diffuse into the porous structure. The minimum necessary barrier thickness for stable continuity of Ta and TaN layers deposited on A10C is determined by detecting the signal of positronium (Ps) escaping into vacuum. It is found that the 25 nm thick layers do not form continuous barriers. This is confirmed by the presence of holes observed in such films using a transmission electron microscope. Although 35 nm and 45 nm Ta and TaN layers perform effectively at room temperature as Ps barriers, only the Ta-capped samples are able to withstand heat treatments up to 500 °C500 °C without breakdown or penetration into the porous film. TaN interdiffusion into the silica pores is indicated by the reduction of the Ps lifetime after high annealing temperatures. The validity of using Ps diffusion to test barrier layers designed to inhibit Cu diffusion is discussed. The procedures to standardize the testing of barrier layer integrity and thermal stability using PALS are proposed. Extension to probing barrier layers in realistic vias and trenches should be straightforward. © 2001 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71187/2/JAPIAU-89-9-5138-1.pd

An overview of the Michigan Positron Microscope Program

An overview of the Michigan Positron Microscope Program is presented with particular emphasis on the second generation microscope that is presently near completion. The design and intended applications of this microscope will be summarized.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/87602/2/391_1.pd

Determination of pore-size distribution in low-dielectric thin films

Positronium annihilation lifetime spectroscopy is used to determine the pore-size distribution in low-dielectric thin films of mesoporous methylsilsesquioxane. A physical model of positronium trapping and annihilating in isolated pores is presented. The systematic dependence of the deduced pore-size distribution on pore shape/dimensionality and sample temperature is predicted using a simple quantum mechanical calculation of positronium annihilation in a rectangular pore. A comparison with an electron microscope image is presented. © 2000 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/69398/2/APPLAB-76-10-1282-1.pd