A versatile laser-based apparatus for time-resolved ARPES with micro-scale spatial resolution

We present the development of a versatile apparatus for a 6.2 eV laser-based time and angle-resolved photoemission spectroscopy with micrometer spatial resolution (time-resolved $\mu$-ARPES). With a combination of tunable spatial resolution down to $\sim$11 $\mu$m, high energy resolution ($\sim$11 meV), near-transform-limited temporal resolution ($\sim$280 fs), and tunable 1.55 eV pump fluence up to $\sim$3 mJ/cm$^2$, this time-resolved $\mu$-ARPES system enables the measurement of ultrafast electron dynamics in exfoliated and inhomogeneous materials. We demonstrate the performance of our system by correlating the spectral broadening of the topological surface state of Bi$_2$Se$_3$ with the spatial dimension of the probe pulse, as well as resolving the spatial inhomogeneity contribution to the observed spectral broadening. Finally, after in-situ exfoliation, we performed time-resolved $\mu$-ARPES on a $\sim$30 $\mu$m few-layer-thick flake of transition metal dichalcogenide WTe$_2$, thus demonstrating the ability to access ultrafast electron dynamics with momentum resolution on micro-exfoliated and twisted materials

Unveiling the underlying interactions in Ta2NiSe5 from photo-induced lifetime change

We present a generic procedure for quantifying the interplay of electronic and lattice degrees of freedom in photo-doped insulators through a comparative analysis of theoretical many-body simulations and time- and angle-resolved photoemission spectroscopy (TR-ARPES) of the transient response of the candidate excitonic insulator Ta2NiSe5. Our analysis demonstrates that the electron-electron interactions dominate the electron-phonon ones. In particular, a detailed analysis of the TRARPES spectrum enables a clear separation of the dominant broadening (electronic lifetime) effects from the much smaller bandgap renormalization. Theoretical calculations show that the observed strong spectral broadening arises from the electronic scattering of the photo-excited particle-hole pairs and cannot be accounted for in a model in which electron-phonon interactions are dominant. We demonstrate that the magnitude of the weaker subdominant bandgap renormalization sensitively depends on the distance from the semiconductor/semimetal transition in the high-temperature state, which could explain apparent contradictions between various TR-ARPES experiments. The analysis presented here indicates that electron-electron interactions play a vital role (although not necessarily the sole one) in stabilizing the insulating state