Novel Designs for Application Specific MEMS Pressure Sensors

In the framework of developing innovative microfabricated pressure sensors, we present here three designs based on different readout principles, each one tailored for a specific application. A touch mode capacitive pressure sensor with high sensitivity (14 pF/bar), low temperature dependence and high capacitive output signal (more than 100 pF) is depicted. An optical pressure sensor intrinsically immune to electromagnetic interference, with large pressure range (0–350 bar) and a sensitivity of 1 pm/bar is presented. Finally, a resonating wireless pressure sensor power source free with a sensitivity of 650 KHz/mmHg is described. These sensors will be related with their applications in  harsh environment, distributed systems and medical environment, respectively. For many aspects, commercially available sensors, which in vast majority are piezoresistive, are not suited for the applications proposed

Разработка методики оптимизации данных для неразрушающего контроля прочности бетона по параметрам электрического отклика на ударное воздействие

The article presents the results of investigation to improve the method of non-destructive testing of concrete strength by the parameters of electric response to impact excitation. The Electric response parameters of concrete samples with the same composition in size 100x100x100mm were studied. It is shown that the use of linear filtering procedure reduces the variance of diagnostic electric parameter to determine the strength of concrete

Surface micromachined pressure sensors with integrated CMOS read-out electronics

In this paper a single chip pressure and temperature sensor system with on chip electronics is presented. The capacitive pressure sensor is fabricated using a CMOS process with additional surface micromachining steps to form the membranes. The membrane dimensions have been optimized for a pressure range of 2, 3.5, 10 and 35 bars, respectively. The temperature sensor shows a straight linear output signal in a temperature range of 0 to 70 xC. For the signal processing switched capacitor circuits are used. The sensor signals are converted to a pulse width modulated output signal. The silicon chip has an active area of 3.5 mmü. Between 0 and 80 xC a temperature dependence of the pressure signal of less than 200 ppm/xC reffering to full scale was found