The role of electron electron double resonance in span relaxation studies on radicals in liquid solutions

Applied Science

Review of scaling effects on physical properties and practicalities of cantilever sensors

Reducing sensor dimension is a good way to increase system sensitivity and response. However the advantages gained must be weighed against other effects which also became significant during the scaling process. In this paper, the scaling effect of cantilever sensors from micrometre to nanometre regimes is reviewed. Changes in the physical properties such as Q-factor, Young's modulus, noise and nonlinear deflections, as well as effects on practical sensor applications such as sensor response and sensor readouts, are presented. Since cantilever is an elemental transducer and device building block, its scaling effects can be further extrapolated to other sensing systems and applications.Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.BUS/Quantum DelftManagement SupportBio-Electronic

Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography

Performance of hydrogen silsesquioxane (HSQ) resist material with respect to the temperature during electron beam exposure was investigated. Electron beam exposure at elevated temperatures up to 90?°C shows sensitivity rise and slight contrast (?) degradation compared to lower temperature cases. Ultrahigh resolution structures formed at elevated temperatures manifest better uniformity together with aspect ratio improvement and less linewidth broadening with overdose. Potential mechanisms for observed phenomena are proposed.QN/Quantum NanoscienceApplied Science

CI2/O2-inductively coupled plasma etching of deep hole-type photonic crystals in InP

We have developed an inductively coupled plasma etching process for fabrication of high-aspect-ratio hole-type photonic crystals in InP, which are of interest for optical devices involving the telecommunication wavelength of 1550 nm. The etching was performed at 250 °C using Cl2/O2 chemistry for sidewall passivation. The process yields nearly cylindrical features with an aspect ratio larger than 10 for hole diameters near 0.25 µm. This makes them very suitable for high-quality photonic crystal patterns

High-dose exposure of silicon in electron beam lithography

Imaging Science and TechnologyApplied Science

Wavelength tuning of planar photonic crystals by local processing of individual holes

Tuning of the resonant wavelength of a single hole defect cavity in planar photonic crystals was demonstrated using transmission spectroscopy. Local post-production processing of single holes in a planar photonic crystal is carried out after selectively opening a masking layer by focused ion beam milling. The resonance was blue-shifted by enlargement of selected holes using local wet chemical etching and red-shifted by infiltration with liquid crystals. This method can be applied to precisely control the resonant frequency, and can also be used for mode selective tuning

Local digital etching and infiltration for tuning of a H1- Cavity in deeply etched InP/InGaAsP/InP photonic crystals

Local post-production processing of single holes in a planar photonic crystal is demonstrated by selectively opening a masking layer by focused ion beam milling. Local tuning was optically demonstrated by both blueshifting and subsequent red-shifting the resonance frequency of a point defect cavity. Since only a few holes of the PC are affected by the post-processing, the Q-factor is not significantly changed. This method can be applied to precisely control the resonant frequency, and can also be used for mode selective tuning

Magnetization losses in submicrometer CoFeB dots etched in a high ion density Cl2-based plasma

Faceting of the etch masks and chlorinated etch residues can reduce the magnetization of patterning magnetic materials substantially, and therefore, constitutes a considerable concern. To get more insight into the magnetization losses, CoFeB dots were etched in a high ion d. Cl2-based plasma with a width ranging from 0.3 to 6.4 mm. The magnetic properties of the CoFeB dots were measured by magnetometry. Submicrometer CoFeB dots showed significant magnetization redns. despite H2O rinsing. SEM (SEM) studies revealed that etching in a Cl2-based plasma caused faceting of the masks, leading to sloped sidewalls. SEM pictures were used to det. the geometric vol., which was compared to the effective magnetic vol. resulting from the magnetometry measurements. The SEM data are in good agreement with the magnetometry data, and a chloride penetration depth of only a few nanometers could be derived, indicating that the postetch rinsing is sufficient to prevent considerable corrosion of the CoFeB dots

Magnetization losses in submicrometer CoFeB dots etched in a high ion density Cl2-based plasma

Faceting of the etch masks and chlorinated etch residues can reduce the magnetization of patterning magnetic materials substantially, and therefore, constitutes a considerable concern. To get more insight into the magnetization losses, CoFeB dots were etched in a high ion d. Cl2-based plasma with a width ranging from 0.3 to 6.4 mm. The magnetic properties of the CoFeB dots were measured by magnetometry. Submicrometer CoFeB dots showed significant magnetization redns. despite H2O rinsing. SEM (SEM) studies revealed that etching in a Cl2-based plasma caused faceting of the masks, leading to sloped sidewalls. SEM pictures were used to det. the geometric vol., which was compared to the effective magnetic vol. resulting from the magnetometry measurements. The SEM data are in good agreement with the magnetometry data, and a chloride penetration depth of only a few nanometers could be derived, indicating that the postetch rinsing is sufficient to prevent considerable corrosion of the CoFeB dots