A Review of the Pinned Photodiode for CCD and CMOS Image Sensors

The pinned photodiode is the primary photodetector structure used in most CCD and CMOS image sensors. This paper reviews the development, physics, and technology of the pinned photodiode

Jot Devices and the Quanta Image Sensor

Abstract The Quanta Image Sensor (QIS) concept and recent work on its associated jot device are discussed. A bipolar jot and a pump-gate jot are described. Both have been modelled in TCAD. As simulated, the pump-gate jot has a full well of 200e-and conversion gain of 480uV/e-. Introduction