134 research outputs found
High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions
In-plane heterojunction tunnel field effect transistors based on monolayer
transition metal dichalcogenides are studied by means of self-consistent
non-equilibrium Green's functions simulations and an atomistic tight-binding
Hamiltonian. We start by comparing several heterojunctions before focusing on
the most promising ones, i.e WTe2-MoS2 and MoTe2-MoS2. The scalability of those
devices as a function of channel length is studied, and the influence of
backgate voltages on device performance is analysed. Our results indicate that,
by fine-tuning the design parameters, those devices can yield extremely low
sub-threshold swings (below 5mV/decade) and Ion/Ioff ratios higher than 1e8 at
a supply voltage of 0.3V, making them ideal for ultra-low power consumption.Comment: 10 page
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