488 research outputs found

    Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers

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    Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion LayersComment: 1 page, submitted to PR

    Comment on "Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures"

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    We show that the comparison between theory and experiment, performed by Pudalov et al. in PRL 91, 126403 (2003), is not valid.Comment: comment on PRL 91, 126403 (2003) by Pudalov et a

    Opening an energy gap in an electron double layer system at integer filling factor in a tilted magnetic field

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    We employ magnetocapacitance measurements to study the spectrum of a double layer system with gate-voltage-tuned electron density distributions in tilted magnetic fields. For the dissipative state in normal magnetic fields at filling factor ν=3\nu=3 and 4, a parallel magnetic field component is found to give rise to opening a gap at the Fermi level. We account for the effect in terms of parallel-field-caused orthogonality breaking of the Landau wave functions with different quantum numbers for two subbands.Comment: 4 pages, 4 figures included, to appear in JETP Letter

    Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon

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    Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron gaps. The data yield an effective g-factor that is close to its value in bulk silicon and does not depend on filling factor. The cyclotron splitting corresponds to the effective mass that is strongly enhanced at low electron densities

    Quantization of the Hall conductivity well beyond the adiabatic limit in pulsed magnetic fields

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    We measure the Hall conductivity, σxy\sigma_{xy}, on a Corbino geometry sample of a high-mobility AlGaAs/GaAs heterostructure in a pulsed magnetic field. At a bath temperature about 80 mK, we observe well expressed plateaux in σxy\sigma_{xy} at integer filling factors. In the pulsed magnetic field, the Laughlin condition of the phase coherence of the electron wave functions is strongly violated and, hence, is not crucial for σxy\sigma_{xy} quantization.Comment: 4 pages, 4 figures, submitted to PR
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