10 research outputs found
Mechanisms of arsenic clustering in silicon
A model of arsenic clustering in silicon is proposed and analyzed. The main
feature of the proposed model is the assumption that negatively charged arsenic
complexes play a dominant role in the clustering process. To confirm this
assumption, electron density and concentration of impurity atoms incorporated
into the clusters are calculated as functions of the total arsenic
concentration. A number of the negatively charged clusters incorporating a
point defect and one or more arsenic atoms are investigated. It is shown that
for the doubly negatively charged clusters or for clusters incorporating more
than one arsenic atom the electron density reaches a maximum value and then
monotonically and slowly decreases as total arsenic concentration increases. In
the case of doubly negatively charged cluster incorporating two arsenic atoms,
the calculated electron density agrees well with the experimental data.
Agreement with the experiment confirms the conclusion that two arsenic atoms
participate in the cluster formation. Among all present models, the proposed
model of clustering by formation of doubly negatively charged cluster
incorporating two arsenic atoms gives the best fit to the experimental data and
can be used in simulation of high concentration arsenic diffusion.Comment: 13 pages, 4 figures. Revised and shortened version of the paper has
been published in Phys. Rev. B, Vol.74 (3), art. no. 035205 (2006
Diffusion of ion-implanted As in Si: influence of the elastic stress
The model of transient enhanced diffusion of arsenic in silicon taking into account the effect of the elastic stress on the drift of "dopant atom — point defect" pairs has been developed and high concentration diffusion of ion-implanted As near the surface of a semiconductor has been simulated
Diffusion of ion-implanted As in Si: influence of the elastic stress
The model of transient enhanced diffusion of arsenic in silicon taking into account the effect of the elastic stress on the drift of "dopant atom — point defect" pairs has been developed and high concentration diffusion of ion-implanted As near the surface of a semiconductor has been simulated
Simulation of plasma assisted doping of silicon
The model of plasma assisted doping of silicon has been developed and calculations of the plasma immersion boron ion implantation combined with the following rapid thermal annealing or with the thermal annealing and additional radiation enhanced diffusion under hydrogen plasma processing have been made
Simulation of plasma assisted doping of silicon
The model of plasma assisted doping of silicon has been developed and calculations of the plasma immersion boron ion implantation combined with the following rapid thermal annealing or with the thermal annealing and additional radiation enhanced diffusion under hydrogen plasma processing have been made