Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing

Abstract Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR spectroscopy of molecules and atom vibrational levels. Special role of dislocations in the surface layer of silicon during the formation of its energy spectrum and rebuilding the defective structure was established. It is shown that the concentration of linear defects (N ≥ 104 cm−2) enriches surface layer with electrically active complexes (dislocation-oxygen, dislocation-vacancy, and dislocation-interstitial atoms of silicon) which are an effective radiative recombination centers

Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

Changes in the resistance of single crystals of p-type conductivity silicon under the action of mechanical loading were investigated in this research. Also, non-irradiated and pre-irradiated X-rays experimental samples were studied. It was found that at small deformation values when they are at the initial stage of the action of elastic deformation, a section forms and increases, on which the resistance practically does not depend on the applied mechanical load. In irradiated crystals, at small deformation values, electron generation processes dominate, which then recombine with the main carriers – holes. The consequence of such processes is the appearance of a maximum increase in electrical resistance at the initial stage of elastic deformation of experimental samples irradiated with X-rays. Charge carrier generation processes begin to dominate with further deformation. Such processes occur as a result of the release of acceptor centers from other complex defects, which are destroyed during the deformation of the Si crystal and captured by mobile dislocations. Thus, the processes of generation of charge carriers prevail over the processes of gettering and, accordingly, a mechano-stimulated decrease in the electrical resistance of p-Si samples occurs