Characterization and simulation of radiation effects on active edges n-on-p technology planar pixel sensors

International audienceThe ATLAS inner tracker has to be upgraded to meet the requirements for radiation hardness and geometrical acceptance in order to withstand the harsh conditions of High Luminosity LHC (HL-LHC). This requires segmented silicon sensors of increased geometrical efficiency. The active edge technology allows to reduce the inactive area at the border of the sensor. The main objective of this work is to evaluate by TCAD simulation, conducted using Silvaco™ TCAD software, the performance of planar n-on-p technology sensors with active edges exposed to high level of radiation for fluences up to 1×1016neq/cm2, using a three-level trap model for ptype FZ silicon material. By using the secondary ion mass spectrometry (SIMS) technique, an accurate representation of the sensor structure was obtained in terms of doping concentration profile. Charge collection efficiency (CCE) is studied as a function of radiation fluence. •Secondary Ion Mass Spectrometry method (SIMS) is used to investigate the doping profile.•The charge collection efficiency (CCE) are simulated a function of radiation fluence.•An ADVACaM edgless sensor matrix is implemented in a full TCAD simulation

Performance of n-on-p planar pixel sensors with active edges at high-luminosity environment

International audienceFuture high-energy physics experiments require highly segmented silicon sensors of increased geometrical efficiency with the ability to withstand extremely high radiation damage. The performance of planar n-on-p sensors with active edges is simulated at high radiation fluences up to 1 × 10$^{16}$ n$_{eq}$/cm$^{2}$, using a three-level trap model for p-type silicon material. Taking advantage of the secondary ion mass spectrometry (SIMS) technique, an accurate representation of the structure was obtained in terms of doping profile. The breakdown voltage, leakage current, hole density and electric field distributions as well as the charge collection efficiency (CCE) are studied as a function of radiation fluence