Competing interactions and magnetic frustration in Yb(4)LiGe(4)

We have studied polycrystalline Yb4LiGe4, a ternary variant of the R5T4 family of layered compounds characterized by a very strong coupling between the magnetic and crystallographic degrees of freedom. The system is mixed valent, with non-magnetic Yb2+ and magnetic Yb3+ present, and is characterized by coexisting ferromagnetic and antiferromagnetic correlations. We present measurements of resistivity, AC-susceptibility, specific heat, and muon spin relaxation (muSR), below 1 K. The low temperature measurements suggest a transition to a mesoscopically inhomogeneous magnetically ordered state below 2 K characterized by fluctuations well below the ordering temperature. This unusual state is believed to result from the enhanced two-dimensionality produced by Li substitution and frustration effects inherent in the Yb sub-lattice geometry.Comment: 29 pages, 11 figures, accepted for publication, Physical Review

Epitaxial thin films of pyrochlore iridate Bi2+xIr2-yO7-δ: structure, defects and transport properties

While pyrochlore iridate thin films are theoretically predicted to possess a variety of emergent topological properties, experimental verification of these predictions can be obstructed by the challenge in thin film growth. Here we report on the pulsed laser deposition and characterization of thin films of a representative pyrochlore compound Bi$_{2}$Ir$_{2}$O$_{7}$. The films were epitaxially grown on yttria-stabilized zirconia substrates and have lattice constants that are a few percent larger than that of the bulk single crystals. The film composition shows a strong dependence on the oxygen partial pressure. Density-functional-theory calculations indicate the existence of Bi$_{Ir}$ antisite defects, qualitatively consistent with the high Bi: Ir ratio found in the films. Both Ir and Bi have oxidation states that are lower than their nominal values, suggesting the existence of oxygen deficiency. The iridate thin films show a variety of intriguing transport characteristics, including multiple charge carriers, logarithmic dependence of resistance on temperature, antilocalization corrections to conductance due to spin-orbit interactions, and linear positive magnetoresistance