Statement:

ed by the diffusion process). In Figure 1, the as-implanted and diffused beryllium and interstitial profiles generated are shown. One can see that, compared to Example 13, a kink in the profile occurs due to this defect non-equilibrium effect. If one increases the interstitial diffusivity in the statement: interstitial gaas D.0=5e-14 D.E= 0. from 5×10 -14 to 1×10 -11 for example, the interstitials are able to diffuse back to their equilibrium levels everywhere, and normal "Example 13 type" diffusion occurs. EXAMPLE 17: Full.Coupled Diffusion 310 SUPREM-IV.GS -- 2D Process Simulation for Si and GaAs vacancy dpos.0=0 dpos.E=0 neg.E=0 tpos.0=0 tneg.0=1 vacancy gaas beryllium neu.0=0 pos.0=0 neg.0=0 dneg.0=0 dpos.0=0 vacancy gaas beryllium tneg.0=0 tpos.0=0 method full.fac diffuse time=.00001 temp=800 argon select z=log10(beryllium) plot.1d x.min=0 x.ma=2 y.mi=14 y.max=20 line.type=4 selec