1,944 research outputs found
Anomalous Hall effect in field-effect structures of (Ga,Mn)As
The anomalous Hall effect in metal-insulator-semiconductor structures having
thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and
hole densities changed by the gate electric field. Strong and unanticipated
temperature dependence, including a change of sign, of the anomalous Hall
conductance has been found in samples with the highest Curie
temperatures. For more disordered channels, the scaling relation between
and , similar to the one observed previously for
thicker samples, is recovered.Comment: 5 pages, 5 figure
Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance
In order to elucidate the nature of ferromagnetic signatures observed in
(Zn,Co)O we have examined experimentally and theoretically magnetic properties
and spin-dependent quantum localization effects that control low-temperature
magnetoresistance. Our findings, together with a through structural
characterization, substantiate the model assigning spontaneous magnetization of
(Zn,Co)O to uncompensated spins at the surface of antiferromagnetic nanocrystal
of Co-rich wurtzite (Zn,Co)O. The model explains a large anisotropy observed in
both magnetization and magnetoresistance in terms of spin hamiltonian of Co
ions in the crystal field of the wurtzite lattice.Comment: 6 pages, 6 figure
Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems
Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in
(Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and
reflects the dependence of the tunneling density of states in a ferromagnetic
layer on orientation of the magnetic moment. Based on ab initio relativistic
calculations of the anisotropy in the density of states we predict sizable TAMR
effects in room-temperature metallic ferromagnets. This opens prospect for new
spintronic devices with a simpler geometry as these do not require
antiferromagnetically coupled contacts on either side of the tunnel junction.
We focus on several model systems ranging from simple hcp-Co to more complex
ferromagnetic structures with enhanced spin-orbit coupling, namely bulk and
thin film L1-CoPt ordered alloys and a monatomic-Co chain at a Pt surface
step edge. Reliability of the predicted density of states anisotropies is
confirmed by comparing quantitatively our ab initio results for the
magnetocrystalline anisotropies in these systems with experimental data.Comment: 4 pages, 2 figure
Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As
Current-induced domain-wall motion with velocity spanning over five orders of
magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in
(Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to
verify theories of spin-transfer by the Slonczewski-like mechanism as well as
by the torque resulting from spin-flip transitions in the domain-wall region.
Evidence for domain-wall creep at low currents is found.Comment: 5 pages, 3 figure
Domain-wall resistance in ferromagnetic (Ga,Mn)As
A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As
with perpendicular magnetic anisotropy has been employed to determine extrinsic
and intrinsic contributions to DW resistance. The former is explained
quantitatively as resulting from a polarity change in the Hall electric field
at DW. The latter is one order of magnitude greater than a term brought about
by anisotropic magnetoresistance and is shown to be consistent with
disorder-induced misstracing of the carrier spins subject to spatially varying
magnetization
Hole concentration in a diluted ferromagnetic semiconductor
We consider a mean-field approach to the hole-mediated ferromagnetism in
III-V Mn-based semiconductor compounds to discuss the dependence of the hole
density on that of Mn sites in Ga_{1-x}Mn_xAs. The hole concentration, p, as a
function of the fraction of Mn sites, x, is parametrized in terms of the
product m*J_{pd}^2 (where m* is the hole effective mass and J_{pd} is the
Kondo-like hole/local-moment coupling), and the critical temperature Tc. By
using experimental data for these quantities, we have established the
dependence of the hole concentration with x, which can be associated with the
occurrence of a reentrant metal-insulator transition taking place in the hole
gas. We also calculate the dependence of the Mn magnetization with x, for
different temperatures (T), and found that as T increases, the width of the
composition-dependent magnetization decreases drammatically, and that the
magnetization maxima also decreases, indicating the need for quality-control of
Mn-doping composition in diluted magnetic semiconductor devices.Comment: 4 pages, 3 figures, RevTeX 3; Fig. 1 changed, new references adde
Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors
The magnetic behavior of insulating doped diluted magnetic semiconductors
(DMS) is characterized by the interaction of large collective spins known as
bound magnetic polarons. Experimental measurements of the susceptibility of
these materials have suggested that the polaron-polaron interaction is
ferromagnetic, in contrast to the antiferromagnetic carrier-carrier
interactions that are characteristic of nonmagnetic semiconductors. To explain
this behavior, a model has been developed in which polarons interact via both
the standard direct carrier-carrier exchange interaction (due to virtual
carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due
to the interactions of polarons with magnetic ions in an interstitial region).
Using a variational procedure, the optimal values of the model parameters were
determined as a function of temperature. At temperatures of interest, the
parameters describing polaron-polaron interactions were found to be nearly
temperature-independent. For reasonable values of these constant parameters, we
find that indirect ferromagnetic interactions can dominate the direct
antiferromagnetic interactions and cause the polarons to align. This result
supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure
Effect of inversion asymmetry on the intrinsic anomalous Hall effect in ferromagnetic (Ga,Mn)As
The relativistic nature of the electron motion underlies the intrinsic part
of the anomalous Hall effect, believed to dominate in ferromagnetic (Ga,Mn)As.
In this paper, we concentrate on the crystal band structure as an important
facet to the description of this phenomenon. Using different k.p and
tight-binding computational schemes, we capture the strong effect of the bulk
inversion asymmetry on the Berry curvature and the anomalous Hall conductivity.
At the same time, we find it not to affect other important characteristics of
(Ga,Mn)As, namely the Curie temperature and uniaxial anisotropy fields. Our
results extend the established theories of the anomalous Hall effect in
ferromagnetic semiconductors and shed new light on its puzzling nature
EPR and ferromagnetism in diluted magnetic semiconductor quantum wells
Motivated by recent measurements of electron paramagnetic resonance (EPR)
spectra in modulation-doped CdMnTe quantum wells, [F.J. Teran {\it et al.},
Phys. Rev. Lett. {\bf 91}, 077201 (2003)], we develop a theory of collective
spin excitations in quasi-two-dimensional diluted magnetic semiconductors
(DMSs). Our theory explains the anomalously large Knight shift found in these
experiments as a consequence of collective coupling between Mn-ion local
moments and itinerant-electron spins. We use this theory to discuss the physics
of ferromagnetism in (II,Mn)VI quantum wells, and to speculate on the
temperature at which it is likely to be observed in n-type modulation doped
systems.Comment: 4 pages, 1 figur
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