3 research outputs found
-GaO Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching
-GaO trench Schottky barrier diodes fabricated through a
Gallium atomic beam etching technique, with excellent field strength and power
device figure of merit, are demonstrated. Trench formation was accomplished by
a low-damage Ga flux etch that enables near-ideal forward operating
characteristics that are independent of fin orientation. The reverse breakdown
field strength of greater than 5.10 MV/cm is demonstrated at breakdown voltage
as of 1.45 kV. This result demonstrates the potential for Ga atomic beam
etching and high-quality dielectric layers for improved performance in
-GaO vertical power devices.Comment: 10 pages, 5 figure
Demonstration of a monocrystalline GaAs--GaO p-n heterojunction
In this work, we report the fabrication and characterizations of a
monocrystalline GaAs/-GaO p-n heterojunction by employing
semiconductor grafting technology. The heterojunction was created by lifting
off and transfer printing a p-type GaAs single crystal nanomembrane to an
AlO-coated n-type-GaO epitaxial substrate. The resultant
heterojunction diodes exhibit remarkable performance metrics, including an
ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a
turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large
current density of 2500 A/cm along with a low ON resistance of 2
mcm.Comment: 14 pages, 5 figure