Exploring the possibility of enhancing the figure-of-merit ( >> 2) of Na0.74_{0.74}CoO2_{2}: A combined experimental and theoretical study

Search of new thermoelectric (TE) materials with high \textit{figure-of-merit} (ZT) is always inspired the researcher in TE field. Here, we present a combined experimental and theoretical study of TE properties of Na$_{0.74}$CoO$_{2}$ compound in high-temperature region. The experimental Seebeck coefficient (S) is found to vary from 64 to 118 $\mu$V/K in the temperature range $300-620$ K. The positive values of S are indicating the dominating p-type behaviour of the compound. The observed value of thermal conductivity ($\kappa$) is $\sim$ 2.2 W/m-K at 300 K. In the temperature region $300-430$ K, the value of $\kappa$ increases up to $\sim$ 2.6 W/m-K and then decreases slowly till 620 K with the corresponding value of $\sim$ 2.4 W/m-K. We have also carried out the theoretical calculations and the best matching between experimental and calculated values of transport properties are observed in spin-polarized calculation within DFT+\textit{U} by chosen \textit{U} = 4 eV. The maximum calculated value of ZT is found to be $\sim$ 0.67 at 1200 K for p-type conduction. Our computational study suggests that the possibility of n-type behaviour of the compound which can lead to a large value of ZT at higher temperature region. Electron doping of $\sim$ 5.1$\times$10$^{20}$ cm$^{-3}$ is expected to give rise the high ZT value of $\sim$ 2.7 at 1200 K. Using these temperature-dependent ZT values, we have calculated the maximum possible values of efficiency ($\eta$) of thermoelectric generator (TEG) made by p and n-type Na$_{0.74}$CoO$_{2}$. The present study suggests that one can get the efficiency of a TE cell as high as $\sim$ 11$\%$ when the cold and hot end temperature are fixed at 300 K and 1200 K, respectively. Such high values of ZT and efficiency suggest that Na$_{0.74}$CoO$_{2}$ can be used as a potential candidate for high-temperature TE applications

Influence of Ni doping on the electronic structure of Ni_2MnGa

The modifications in the electronic structure of Ni_{2+x}Mn_{1-x}Ga by Ni doping have been studied using full potential linearized augmented plane wave method and ultra-violet photoemission spectroscopy. Ni 3d related electron states appear due to formation of Ni clusters. We show the possibility of changing the minority-spin DOS with Ni doping, while the majority-spin DOS remains almost unchanged. The total magnetic moment decreases with excess Ni. The total energy calculations corroborate the experimentally reported changes in the Curie temperature and the martensitic transition temperature with x.Comment: 4 pages, 4 figures, accepted in Phys. Rev.

Evolution of complex magnetic phases and metal-insulator transition through Nb substitution in La0.5_{0.5}Sr0.5_{0.5}Co1−x_{1-x}Nbx_xO3_3

We report the evolution of structural, magnetic, transport, and electronic properties of bulk polycrystalline La$_{0.5}$Sr$_{0.5}$Co$_{1-x}$Nb$_x$O$_3$ ($x =$ 0.025--0.25) samples. The Rietveld refinement of the x-ray diffraction patterns with R$\bar3$c space group reveals that the lattice parameters and rhombohedral distortion monotonously increase with the Nb$^{5+}$(4$d^0$) substitution ($x$). The magnetic susceptibility exhibits a decrease in the magnetic ordering temperature and net magnetization with $x$, which manifests that the Nb substitution dilutes the ferromagnetic (FM) double exchange interaction and enhances the antiferromagnetic (AFM) super-exchange interaction. Interestingly, for the $x>$ 0.1 samples the FM order is completely suppressed and the emergence of a glassy state is clearly evident. Moreover, the decrease in the coercivity (H$\rm_{C}$) and remanence (M$\rm_{r}$) with $x$ in the magnetic isotherms measured at 5~K further confirms the dominance of AFM interactions and reduction of FM volume fraction for the $x>$ 0.1 samples. More interestingly, we observe resistivity minima for the $x=$ 0.025 and 0.05 samples, which are analyzed using the quantum corrections in the conductivity, and found that the weak localization effect dominates over the renormalized electron-electron interactions in the 3D limit. Further, a semiconducting resistivity behavior is obtained for $x>$ 0.05, which follows the Arrhenius law at high temperatures ($\sim$160--320~K), and the 3D-variable range hopping prevails in the low-temperature region ($<$160~K). The core-level photoemission spectra confirm the valence state of constituent elements and the absence of Co$^{2+}$ is discernible.Comment: submitte

Investigation of lattice dynamics, magnetism and electronic transport in β\beta-Na0.33_{0.33}V2_2O5_{5}

We investigate the electronic and magnetic properties as well as lattice dynamics and spin-phonon coupling of $\beta$-Na$_{0.33}$V$_2$O$_5$ using temperature-dependent Raman scattering, dc-magnetization and dc-resistivity, x-ray photoemission, and absorption spectroscopy. The Rietveld refinement of XRD pattern with space group C2/m confirms the monoclinic structure. The analysis of temperature-dependent Raman spectra in a temperature range of 13--673~K reveals an anharmonic dependence of the phonon frequency and full width at half maximum, which is accredited to the symmetric phonon decay. However, below about 40 K, the hardening of the phonon frequency beyond anharmonicity is attributed to the spin-phonon coupling. Interestingly, the estimated effective magnetic moment $\mu_{\rm eff}=$ 0.63~$\mu_B$ from the magnetization data manifests a mixed-valence state of V ions in 4+ (18$\pm$1\%) and 5+ (82$\pm$1\%). A similar ratio of V$^{4+}$ to V$^{5+}$ is also observed in the x-ray photoemission and x-ray absorption near-edge spectra and that is found to be consistent with the sample stoichiometry. In addition, the V$^{4+}$ ions are distributed between different vanadium (V1 and V3) sites. The analysis of extended x-ray absorption fine structure at different V-sites gives the corresponding V--O bond lengths, which are utilized in the assignment of Raman modes. Moreover, the temperature-dependent resistivity resembles a semiconducting behavior where the charge carrier transport is facilitated by the band conduction at higher temperatures and via hopping $\le$260~K.Comment: to be published in PR