10 research outputs found
Stoichiometry-dependent deep levels in p-GaAs prepared by annealing under excess arsenic vapor pressure
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Photocapacitance investigation of the ionized levels in n-GaAs crystals and its association with the ``photoquenching phenomenon\u27\u27
Get PDFPhotocapacitance investigation of the two photoquenching levels in n-type GaAs crystals with excess arsenic atoms
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Stoichiometry-dependent deep levels in p-GaAs prepared by annealing under excess arsenic vapor pressure
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