Pulse Generation Behavior of Single-Walled Carbon Nanotube/Polyoxometalate Complex Random Network

Replacing von-Neumann architecture with walled carbon nanotube (SWNT) with new neuromorphic chips is vital for computers to perform polyoxometalate POM) ion ([SV2W10O40]H4TPP) complex cognitive problem with low power and see the effect of higher POM concentration. We consume like our brain. The synaptic part of the use simple sonication method for SWNT/POM brain has been well studied via memristors but fabrication and study the spiking and spike time research on the artificial neurons is only limited to high interval behavior via electrical measurements. The power CMOS circuitry. Following the previous work, results show that the device can behave as an artificial by H. Tanaka et al.[2] herein we functionalize single neuron even at low voltages and hence can be used for low power neuromorphic computing.Proceedings of International Symposium on Applied Science 2019 (ISAS),18-19 October, 2019, Ho Chi Minh City University of Technology, Ho Chi Minh City, Vietna

Pulse Generation Behavior of Single-Walled Carbon Nanotube/Polyoxometalate Complex Random Network

Replacing von-Neumann architecture with walled carbon nanotube (SWNT) with new neuromorphic chips is vital for computers to perform polyoxometalate POM) ion ([SV2W10O40]H4TPP) complex cognitive problem with low power and see the effect of higher POM concentration. We consume like our brain. The synaptic part of the use simple sonication method for SWNT/POM brain has been well studied via memristors but fabrication and study the spiking and spike time research on the artificial neurons is only limited to high interval behavior via electrical measurements. The power CMOS circuitry. Following the previous work, results show that the device can behave as an artificial by H. Tanaka et al.[2] herein we functionalize single neuron even at low voltages and hence can be used for low power neuromorphic computing.Proceedings of International Symposium on Applied Science 2019 (ISAS),18-19 October, 2019, Ho Chi Minh City University of Technology, Ho Chi Minh City, Vietna