43 research outputs found
Drug-drug interactions and QT prolongation as a commonly assessed cardiac effect - comprehensive overview of clinical trials
The Mechanism of Simulated Torsade de Pointes in a Computer Model of Propagated Excitation
Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements
The high power RF device performance decreases as operation
temperature increases (e.g. fall of electron mobility impacting the cut-off frequencies
and degradation of device reliability). Therefore the determination of device
temperature is a key issue for device topology optimisation. This work presents the
comparison between pulsed I-V at different temperature and DC measurements of
AlGaN/GaN HEMTs grown on two different substrates: sapphire and silicon. This
technique allows the determination of mean channel temperature and the device
thermal resistance. The thermal resistance is a classical way to define the average
channel temperature as a function of the dissipated power. In this work the thermal
resistance ratio of the HEMT grown on sapphire compared to the one grown on silicon
is found to be 1.7 instead of 3 as expected from straightforward thermal conductivity
ratio. This lower difference is clearly attributed to the contribution of the GaN buffer
layer