On the influence of recombination centers on the electrical performance of silicon power rectifiers

The use of gold, platinum and electron irradiation induced defects as recombination centers in silicon devices is studied. Results are presented concerning the variations of carrier lifetime with the concentration of both deep and shallow level impurities, for different bias conditions. The influence of carrier lifetime on the electrical performance of power PIN rectifiers is considered in order to compare the relative advantages of the lifetime controlling techniques

Analysis of Hybrid Router-Assisted Reliable Multicast Protocols in Lossy Networks

International audienc

AMRHy: Hybrid Protocol for a Reliable Multicast Transport in Active Networking Environments

International audienc

Analysis of Delay Latency of the Active Reliable Multicast Protocols

International audienc

A comparative Analysis of Reliable Multicast Protocols in Active Networking Environments

International audienc

Characterization of Thermal Contact in Injection Molding via the Combination of an Infrared Hollow Waveguide System and a Two-thermocouple Probe

Peer reviewed: YesNRC publication: Ye