14 research outputs found

    Effect of Extrusion Speed on the Microstructure and Tensile Properties of AZ31 Alloy

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    The influences of extrusion speed on the microstructure and tensile properties of AZ31 alloy were investigated. The results suggested that the yield and tensile strength of AZ31 alloy decrease but elongation increases with the reduction of extruded speed. High speed extrusion produces fine grains with texture of c-axis perpendicular with extruded direction. The tension deformation is dominated by slip and the formed texture is obstructive for the basal slip, and also the inhomogeneous structure formed at high speed extrusion is harmful to the ductility. Samples extruded at low speed have comparatively homogeneous and coarse microstructure. Twinning provided more tension deformation and the lattice rotation induced by twinning is favorable for the activities of new slip systems, which induced the better ductility of AZ31 alloy

    Effect of Extrusion Speed on the Microstructure and Tensile Properties of AZ31 Alloy

    No full text
    The influences of extrusion speed on the microstructure and tensile properties of AZ31 alloy were investigated. The results suggested that the yield and tensile strength of AZ31 alloy decrease but elongation increases with the reduction of extruded speed. High speed extrusion produces fine grains with texture of c-axis perpendicular with extruded direction. The tension deformation is dominated by slip and the formed texture is obstructive for the basal slip, and also the inhomogeneous structure formed at high speed extrusion is harmful to the ductility. Samples extruded at low speed have comparatively homogeneous and coarse microstructure. Twinning provided more tension deformation and the lattice rotation induced by twinning is favorable for the activities of new slip systems, which induced the better ductility of AZ31 alloy

    The Influence of Sr Addition on the Microstructure and Mechanical Properties of Aluminum Die-casting Alloys

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    The effects of strontium addition on the microstructure and mechanical properties of aluminum alloys 380 and 413 are researched. All samples are prepared through high pressure die-casting, and the effect of the sampleā€™s thickness is also compared. The results indicate that the Sr addition can refine the metallographic microstructure of two alloys in different degrees, mainly to eutectic Si phase. The mechanical properties of the two alloys are improved slightly through Sr modification to the thin wall castings. The enhancement of mechanical properties is evident to the thick wall castings

    The Influence of Sr Addition on the Microstructure and Mechanical Properties of Aluminum Die-casting Alloys

    No full text
    The effects of strontium addition on the microstructure and mechanical properties of aluminum alloys 380 and 413 are researched. All samples are prepared through high pressure die-casting, and the effect of the sampleā€™s thickness is also compared. The results indicate that the Sr addition can refine the metallographic microstructure of two alloys in different degrees, mainly to eutectic Si phase. The mechanical properties of the two alloys are improved slightly through Sr modification to the thin wall castings. The enhancement of mechanical properties is evident to the thick wall castings

    Sheet Stamping Formability Test System based Servo Crank Press

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    AbstractProposed the tentative plan that carries on the formability test by simulation practical crank punch press slide speed characteristic, designed the solution to the implementation difficulty, and has carried on the actual attempt. The servo motor drive crank press speed alters at more sects which can get slider speed characteristic coherent with crank press varies. The system can test varies stamping formability that speed changeable based on sine curve. The system is composed of 600kN servo crank press, double action and all-purpose moldbase, date get and inspect analyze system. The moldbase adopted positive direction structural and self-motion, with variable blank holder force and counterforce controlled by hydraulic system with closed loop. The blank holder force can be set up in 5 sects which following with slide position, shortest control sect in 200ms. Appropriate profile of blank holder force can setup with the process needed. Blank holder has quartz force sensor which can inspect blank holder force and the control precision is in 0.1kN

    Dingkun pill alleviates metabolic abnormalities in polycystic ovary syndrome through brown adipose tissue activation

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    Abstract Background Traditional Chinese medicine has been used for a long time to treat a variety of gynecological diseases. Among various traditional Chinese medicine, Dingkun Pill (DK) has been used for the treatment of female gynecological diseases. However, DK therapeutic effect on PCOS and the target tissue for its potential effect need to be explored. This study aims to explore the therapeutic effect of DK for PCOS in mice from three aspects: metabolism, endocrine and fertility, and determine whether the brown adipose tissue is the target organ to alleviate the PCOS phenotype. Methods PCOS mouse model was constructed by subcutaneous injection of DHEA. The estrous cycle, ovulation, and pregnancy outcome was examined in mice. The level of hormone including the LH, FSH, estrogen and testosterone in the serum were measured by ELISA. Both the glucose sensitivity and insulin sensitivity were determined in mice with different treatment. The histomorphology and lipid contents in the brown adipose tissue were analyzed. RNA-Seq was conducted for the brown adipose tissue and different expression of critical metabolism marker genes was confirmed by real-time PCR. Results The data showed that the fertility in PCOS mice with DK treatment was significantly increased, and the metabolic disorder was partially restored. Both the whiten of brown adipose tissue and reduced UCP1 expression induced by DHEA was rescued by the DK. The RNA-Seq data further demonstrated both the DHEA induced downregulation of lipolysis genes and oxidative phosphorylation genes were at least partially rescued by DK in the brown adipose tissue. Conclusions DK has therapeutic effect on PCOS in DHEA treated mice and the brown adipose tissue is at least one critical target organ to alleviate the PCOS. This is achieved by not only regulating the lipid mobilization of brown adipose, but also restoring its thermogenic function

    Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

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    In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATLAS 2D device technology computer-aided design (TCAD). The peak electric fields under the gate in drain-side can be alleviated effectively in 2FFP devices, compared with basic and GFP devices, which promotes the breakdown voltage (BV) and suppresses the current collapse phenomenon. As a result, the ON-resistance increase caused by the current collapse phenomena is dramatically suppressed in 2FFP ~19.9% compared with GFP ~49.8% when a 1 ms duration pre-stress was applied with Vds = 300 V in the OFF-state. Because of the discontinuous FP structure, more electric field peaks appear at the edge of the FFP stacks, which leads to a higher BV of ~454.4 V compared to the GFP ~394.3 V and the basic devices ~57.6 V. Moreover, the 2FFP structure performs lower a parasitic capacitance of Cgs = 1.03 pF and Cgd = 0.13 pF than those of the GFP structure (i.e., Cgs = 1.89 pF and Cgd = 0.18 pF). Lower parasitic capacitances lead to a much higher cut-off frequency (ft) of 46 GHz and a maximum oscillation frequency (fmax) of 130 GHz than those of the GFP structure (i.e., ft = 27 GHz and fmax = 93 GHz). These results illustrate the superiority of the 2FFP structure for RF GaN HEMT and open up enormous opportunities for integrated RF GaN devices
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