International Consensus Statement on Rhinology and Allergy: Rhinosinusitis

Background: The 5 years since the publication of the first International Consensus Statement on Allergy and Rhinology: Rhinosinusitis (ICAR‐RS) has witnessed foundational progress in our understanding and treatment of rhinologic disease. These advances are reflected within the more than 40 new topics covered within the ICAR‐RS‐2021 as well as updates to the original 140 topics. This executive summary consolidates the evidence‐based findings of the document. Methods: ICAR‐RS presents over 180 topics in the forms of evidence‐based reviews with recommendations (EBRRs), evidence‐based reviews, and literature reviews. The highest grade structured recommendations of the EBRR sections are summarized in this executive summary. Results: ICAR‐RS‐2021 covers 22 topics regarding the medical management of RS, which are grade A/B and are presented in the executive summary. Additionally, 4 topics regarding the surgical management of RS are grade A/B and are presented in the executive summary. Finally, a comprehensive evidence‐based management algorithm is provided. Conclusion: This ICAR‐RS‐2021 executive summary provides a compilation of the evidence‐based recommendations for medical and surgical treatment of the most common forms of RS

Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property

As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance material after high temperature annealing. Defects in the InP materials have been studied by conventional Hall effect measurement, thermally stimulated current spectroscopy, deep level transient spectroscopy and X-ray diffraction respectively. The results indicate that Fe atoms in the InP material change from the substitutional to the interstitial sites under thermal activation. Consequently, the InP material loses its deep compensation centers which results in the change in types of conduction. The mechanism and cause of the phenomena have been analyzed through comparison of the sites of Fe atom occupation and activation in doping, diffusion and ion implantation processes of InP

Influence of deep level defects on electrical compensation in semi-insulating InP materials

In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulating ( SI) materials prepared by Fe-doping and high temperature annealing of undoped InP. Influence of deep level defects in the SI-InP materials on the electrical compensation has been studied thermally stimulated current spectroscopy (TSC). Electrical property of the Fe-doped SI-InP is deteriorated due to involvement of a high concentration of deep level defects in the compensation. In contrast, the concentration of deep defects is very low in high temperature annealed undoped SI-InP in which Fe acceptors formed by diffusion act as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance. A more comprehensive electrical compensation model of SI-InP has been given based on the research results

Electron irradiation induced defects in high temperature annealed InP single crystal

Electron irradiation induced defects in InP material which has been formed by high temperature annealing undoped InP in different atmosphere have been studied in this paper. In addition to Fe acceptor, there is no obvious defect peak in the sample before irradiation, whereas five defect peaks with activation energies of 0.23 eV, 0.26 eV, 0.31 eV, 0.37 eV and 0.46 eV have been detected after irradiation. InP annealed in P ambient has more thermally induced defects, and the defects induced by electron irradiation have characteristics of complex defect. After irradiation, carrier concentration and mobility of the samples have suffered obvious changes. Under the same condition, electron irradiation induced defects have fast recovery behavior in the FeP2 ambient annealed InP. The nature of defects, as well as their recovery mechanism and influence on material property have been discussed from the results