Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

Unlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) studies. The promising advantage of this application of positron annihilation over the conventional DLTS is that it could further extract extra microstructure information of deep-level defects, such as whether a deep level defect is vacancy related or not. A demonstration of EL2 defect level transient study in GaAs was shown and the EL2 level of 0.82±0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies. © 2002 American Institute of Physics.published_or_final_versio

Centrifuge modeling of rocking-isolated inelastic RC bridge piers

Experimental proof is provided of an unconventional seismic design concept, which is based on deliberately underdesigning shallow foundations to promote intense rocking oscillations and thereby to dramatically improve the seismic resilience of structures. Termed rocking isolation, this new seismic design philosophy is investigated through a series of dynamic centrifuge experiments on properly scaled models of a modern reinforced concrete (RC) bridge pier. The experimental method reproduces the nonlinear and inelastic response of both the soil-footing interface and the structure. To this end, a novel scale model RC (1:50 scale) that simulates reasonably well the elastic response and the failure of prototype RC elements is utilized, along with realistic representation of the soil behavior in a geotechnical centrifuge. A variety of seismic ground motions are considered as excitations. They result in consistent demonstrably beneficial performance of the rocking-isolated pier in comparison with the one designed conventionally. Seismic demand is reduced in terms of both inertial load and deck drift. Furthermore, foundation uplifting has a self-centering potential, whereas soil yielding is shown to provide a particularly effective energy dissipation mechanism, exhibiting significant resistance to cumulative damage. Thanks to such mechanisms, the rocking pier survived, with no signs of structural distress, a deleterious sequence of seismic motions that caused collapse of the conventionally designed pier. © 2014 The Authors Earthquake Engineering & Structural Dynamics Published by John Wiley & Sons Ltd

EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy

Positron lifetime measurements performed on Au/GaAs samples at room temperature with an applied square-wave ac bias show a frequency dependent interlace related lifetime intensity that peaks around 0.4 Hz. The observation is explained by the ionization of the deep-donor level EL2 to EL2+ in the GaAs region adjacent to the Au/GaAs interface, causing a transient electric field to be experienced by positrons drifting towards the interface. Without resorting to temperature scanning or any Arrhenius plot the EL2 donor level is found to be located 0.80±0.01±0.05 eV below the conduction-band minimum, where the first error estimate is statistical and the second systematic. The result suggests positron annihilation may, in some instances, act as an alternative to capacitance transient spectroscopies in characterizing deep levels in both semiconductors and semi-insulators.published_or_final_versio

Study of DX center in Cd0.8Zn0.2Te:CI by positron annihilation

Variable energy positron beam and positron annihilation lifetime experiments have been carried out to study the DX center in Cd0.8Zn0.2Te:Cl at 50 K. A short positron effective diffusion length of 275±25 Å and a large intensity of 79.0%±0.3% for the long lifetime component indicate a strong trapping effect at DX centers. A trapping rate of κ=1.53±0.05×109 s-1 and a positron lifetime of 335±2 ps at the DX center were obtained. The concentration of DX centers is found to be 5.9 ±0.7×1016 cm-3, which is in good agreement with the results obtained using Hall effect and thermo-electric effect measurements. © 1998 American Institute of Physics.published_or_final_versio

Positron-annihilation study of compensation defects in InP

Positron-annihilation lifetime and positron-annihilation Doppler-broadening (PADB) spectroscopies have been employed to investigate the formation of vacancy-type compensation defects in n-type undoped liquid encapsulated Czochrolski grown InP, which undergoes conduction-type conversions under high temperature annealing. N-type InP becomes p-type semiconducting by short time annealing at 700°C, and then turns into n-type again after further annealing but with a much higher resistivity. Long time annealing at 950°C makes the material semi-insulating. Positron lifetime measurements show that the positron average lifetime τ av increases from 245 ps to a higher value of 247 ps for the first n-type to p-type conversion and decreases to 240 ps for the ensuing p-type to n-type conversion. The value of τ av increases slightly to 242 ps upon further annealing and attains a value of 250 ps under 90 h annealing at 950°C. These results together with those of PADB measurements are explained by the model proposed in our previous study. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy-type defects and the progressive variation of their concentrations during annealing are related to the electrical properties of the bulk InP material. © 2002 American Institute of Physics.published_or_final_versio

Positron-lifetime study of compensation defects in undoped semi-insulating InP

Positron-lifetime and infrared-absorption spectroscopies have been used to investigate the compensation defects that render undoped n-type liquid encapsulated Czochralski-grown InP semi-insulating under high-temperature annealing. The positron measurements, carried out over the temperature range of 25-300 K, reveal in the as-grown material a positron lifetime of 282±5 ps which we associate with either the isolated indium vacancy V 3- In or related hydrogen complexes. The shallow donor complex V InH 4, responsible for much of the n-type conductivity and the strong infrared absorption signal at 4320 nm, is ruled out as a significant trapping site on the grounds that its neutral state is present at too low a concentration. After annealing at 950°C, in conjunction with the disappearance of the V InH 4 infrared-absorption signal, trapping into V In-related centers is observed to increase slightly, and an additional positron trapping defect having a lifetime of 330 ps appears at a concentration of ∼10 16 cm -3, indicating divacancy trapping. These results support the recent suggestion that the V InH 4 complex present in as-grown InP dissociates during annealing, forming V InH (3-n)- n (0≤n≤3) complexes and that the recombination of V In with a phosphorus atom results in the formation of EL2-like deep donor P In antisite defect, which compensates the material. It is suggested that the divacancy formed on annealing is V InV P, and that this defect is probably a by-product of the P In antisite formation.published_or_final_versio

Influenza and Bacterial Pathogen Coinfections in the 20th Century

To help understand the potential impact of bacterial coinfection during pandemic influenza periods, we undertook a far-reaching review of the existing literature to gain insights into the interaction of influenza and bacterial pathogens. Reports published between 1950 and 2006 were identified from scientific citation databases using standardized search terms. Study outcomes related to coinfection were subjected to a pooled analysis. Coinfection with influenza and bacterial pathogens occurred more frequently in pandemic compared with seasonal influenza periods. The most common bacterial coinfections with influenza virus were due to S. pneumoniae, H. influenzae, Staphylococcus spp., and Streptococcus spp. Of these, S. pneumoniae was the most common cause of bacterial coinfection with influenza and accounted for 40.8% and 16.6% of bacterial coinfections during pandemic and seasonal periods, respectively. These results suggest that bacterial pathogens will play a key role in many countries, as the H1N1(A) influenza pandemic moves forward. Given the role of bacterial coinfections during influenza epidemics and pandemics, the conduct of well-designed field evaluations of public health measures to reduce the burden of these common bacterial pathogens and influenza in at-risk populations is warranted

Influenza and Bacterial Coinfections in the 20th Century

To help understand the potential impact of bacterial coinfection during pandemic influenza periods, we undertook a far-reaching review of the existing literature to gain insights into the interaction of influenza and bacterial pathogens. Reports published between 1950 and 2006 were identified from scientific citation databases using standardized search terms. Study outcomes related to coinfection were subjected to a pooled analysis. Coinfection with influenza and bacterial pathogens occurred more frequently in pandemic compared with seasonal influenza periods. The most common bacterial coinfections with influenza virus were due to S. pneumoniae, H. influenzae, Staphylococcus spp., and Streptococcus spp. Of these, S. pneumoniae was the most common cause of bacterial coinfection with influenza and accounted for 40.8% and 16.6% of bacterial coinfections during pandemic and seasonal periods, respectively. These results suggest that bacterial pathogens will play a key role in many countries, as the H1N1(A) influenza pandemic moves forward. Given the role of bacterial coinfections during influenza epidemics and pandemics, the conduct of well-designed field evaluations of public health measures to reduce the burden of these common bacterial pathogens and influenza in at-risk populations is warranted

Development and characterisation of novel electrospun polylactic acid/tubular clay nanocomposites

A novel material formulation method of polylactic acid /tubular clay nanocomposites via electrospinning was introduced and the important processing parameters such as solution concentration, clay loading, material feed rate were particularly investigated. The hybrid fibre diameter, the clay dispersability and the thermal properties of such nanocomposites were then characterised by using the scanning electron microscopy, wide-angle X-ray diffraction and differential scanning calorimetry, respectively, to establish a fundamental structure–property relationship for the future application