54 research outputs found
Shot noise in resonant tunneling through a zero-dimensional state with a complex energy spectrum
We investigate the noise properties of a GaAs/AlGaAs resonant tunneling
structure at bias voltages where the current characteristic is determined by
single electron tunneling. We discuss the suppression of the shot noise in the
framework of a coupled two-state system. For large bias voltages we observed
super-Poissonian shot noise up to values of the Fano factor .Comment: 4 pages, 4 figures, accepted for Phys. Rev.
Capacitance spectroscopy in quantum dots: Addition spectra and decrease of tunneling rates
A theoretical study of single electron capacitance spectroscopy in quantum
dots is presented. Exact diagonalizations and the unrestricted Hartree-Fock
approximation have been used to shed light over some of the unresolved aspects.
The addition spectra of up to 15 electrons is obtained and compared with the
experiment. We show evidence for understanding the decrease of the single
electron tunneling rates in terms of the behavior of the spectral weight
function. (To appear in Phys. Rev. B (Rapid Comm.))Comment: 10 pages, Revtex, hard copy or PostScript Figures upon request on
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Enhanced fluctuations of the tunneling density of states near bottoms of Landau bands measured by a local spectrometer
We have found that the local density of states fluctuations (LDOSF) in a
disordered metal, detected using an impurity in the barrier as a spectrometer,
undergo enhanced (with respect to SdH and dHvA effects) oscillations in strong
magnetic fields, omega _c\tau > 1. We attribute this to the dominant role of
the states near bottoms of Landau bands which give the major contribution to
the LDOSF and are most strongly affected by disorder. We also demonstrate that
in intermediate fields the LDOSF increase with B in accordance with the results
obtained in the diffusion approximation.Comment: 4 pages, 4 figure
Acoustic Phonon-Assisted Resonant Tunneling via Single Impurities
We perform the investigations of the resonant tunneling via impurities
embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the
characteristics measured at 30mK, the contribution of individual donors
is resolved and the fingerprints of phonon assistance in the tunneling process
are seen. The latter is confirmed by detailed analysis of the tunneling rates
and the modeling of the resonant tunneling contribution to the current.
Moreover, fluctuations of the local structure of the DOS (LDOS) and Fermi edge
singularities are observed.Comment: accepted in Phys. Rev.
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