6 research outputs found

    Very High Frequency Power Switching: A Road Map To Envelope Tracking

    No full text
    RF (Radio Frequency) GaN transistors may be used for power switching at frequencies of 30 MHz and above, thereby reaching voltage control bandwidth of critical interest for the so-called ET (Envelope Tracking) technique. ET is meant at optimising the efficiency of RF amplifiers by supplying them with a voltage adapted to their power level at any time, and is the subject of many R&D works worldwide. The present paper provides an overview on the different activities run at the European Space Agency so far in this context, and present the possible way-forward to embark ET on future spacecraft

    Very High Frequency Power Switching: A Road Map To Envelope Tracking

    No full text
    RF (Radio Frequency) GaN transistors may be used for power switching at frequencies of 30 MHz and above, thereby reaching voltage control bandwidth of critical interest for the so-called ET (Envelope Tracking) technique. ET is meant at optimising the efficiency of RF amplifiers by supplying them with a voltage adapted to their power level at any time, and is the subject of many R&D works worldwide. The present paper provides an overview on the different activities run at the European Space Agency so far in this context, and present the possible way-forward to embark ET on future spacecraft

    Very High Frequency Power Switching: A Road Map To Envelope Tracking

    No full text
    RF (Radio Frequency) GaN transistors may be used for power switching at frequencies of 30 MHz and above, thereby reaching voltage control bandwidth of critical interest for the so-called ET (Envelope Tracking) technique. ET is meant at optimising the efficiency of RF amplifiers by supplying them with a voltage adapted to their power level at any time, and is the subject of many R&D works worldwide. The present paper provides an overview on the different activities run at the European Space Agency so far in this context, and present the possible way-forward to embark ET on future spacecraft

    Fast tracking envelope of the RF power amplifier

    No full text
    Having an envelope tracking radio frequency power amplifier, comprising: a RF power amplifying means for amplifying the RF signal; and a switching DC / DC converter, comprising a switching means and a rectifying means, amplifying means for providing power to said RF and the envelope is proportional to the voltage level of DC power RF signal; wherein said switching means is an RF power transistor; wherein said rectifying means, and preferably also the power of said RF amplifying means is connected in two end of the process the same transistor device. Preferably, the process is the same as the RF transistor power amplifying means. May also provide a low pass filter for reducing the bandwidth of the envelope signal, the driving DC / DC converter of the PWM signal depends on the bandwidth

    Radio-frequency power amplifier with fast envelope tracking

    No full text
    A radio-frequency power amplifier with envelope tracking, comprising: a power RF amplifying device for amplifying a RF signal; and a switching DC/DC converter, comprising a switching device and a rectifying device, for providing said power RF amplifying device with a DC power supply at a voltage level proportional to an envelope of said RF signal; wherein said switching device is a RF power transistor; characterized in that said rectifying device, and preferably also said power RF amplifying device, is also a transistor of a same technology, connected as a two-terminal device. Preferably, said power RF amplifying device is also a transistor of said same technology. A low-pass filter can also be provided for reducing the bandwidth of the envelope signal on which the PWM signal driving the DC/DC converter depends
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