2 research outputs found
Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44 matrix for use in intermediate band solar cells
High-quality InAs quantum dots (QDs) with nominal thicknesses of 5.0–8.0 monolayers were grown on a digital AlAs0.56Sb0.44 matrix lattice-matched to the InP(001) substrate. All QDs showed bimodal size distribution, and their optical properties were investigated by photoluminescence (PL) and time-resolved PL measurements. Power dependent PL exhibited a linear relationship between the peak energy and the cube root of the excitation power for both the small QD family (SQDF) and the large QD family (LQDF), which is attributed to the type-II transition. The PL intensity, peak energy, and carrier lifetime of SQDF and LQDF showed very sensitive at high temperature. Above 125 K, the PL intensity ratio increased continuously between LQDF and SQDF, the peak energy shifted anomalously in SQDF, and the longer carrier radiative lifetime (≥3.0 ns at 77 K) reduced rapidly in SQDF and slowly in LQDF. These results are ascribed to thermally activated carrier escape from SQDF into the wetting layer, which then relaxed into LQDF with low-localized energy states
Electron and proton radiation effects on band structure and carrier dynamics in MBE and MOCVD grown III-V test structures
As part of a continuing study on radiation effects in photovoltaic materials, we exposed a series of AlGaAs/GaAs double heterostructures grown by molecular beam epitaxy and metalorganic chemical vapor deposition to electron and proton radiation. The active regions of the test articles were doped either unintentionally, p -type or n -type. Steady state and time resolved photoluminescence spectroscopy were used to characterize changes to the band structure and carrier dynamics. The effect of electron radiation on low temperature photoluminescence spectra and on room temperature carrier lifetime varied with dopant type and density. Steady-state photoluminescence reveals distinct effects from electron and proton exposures