368 research outputs found
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured
Ge substrates produced by high-temperature flash heating exploiting the
spontaneous faceting of the Ge(001) surface close to the onset of surface
melting. A very diverse growth mode is obtained depending on the specific
atomic structure and step density of nearby surface domains with different
vicinal crystallographic orientations. On highly-miscut areas of the Ge(001)
substrate, the critical thickness for islanding is lowered to about 5 ML, in
contrast to the 11 ML reported for the flat Ge(001) surface, while on
unreconstructed (1x1) domains the growth is Volmer-Weber driven. An explanation
is proposed considering the diverse relative contributions of step and surface
energies on misoriented substrates. In addition, we show that the bottom-up
pattern of the substrate naturally formed by thermal annealing determines a
spatial correlation for the dot sites
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains
n-type Ge/SiGe quantum wells have been suggested as a promising platform for the realization of a Si-compatible THz laser. Focusing on this material system, we have developed a numerical model to describe the intersubband carrier dynamics which restores the equilibrium after pulsed optical excitation in asymmetric coupled Ge/SiGe quantum wells. We take into account inelastic and elastic scattering processes and investigate different quantum-well geometries, doping densities, and excitation regimes. In this configuration space, we disentangle the effect on the overall dynamics of each scattering channel and provide intersubband relaxation times, finding larger values with respect to III-V based materials, thanks to the weaker electron-phonon coupling with respect to III-V compounds. Finally, the model is used to study and optimize the population inversion between the first- and second-excited subband levels and to assess its dependence on the lattice temperature, providing a sound theoretical framework to guide forthcoming experiments
Early stage of CVD graphene synthesis on Ge(001) substrate
In this work we shed light on the early stage of the chemical vapor
deposition of graphene on Ge(001) surfaces. By a combined use of microRaman and
x-ray photoelectron spectroscopies, and scanning tunneling microscopy and
spectroscopy, we were able to individuate a carbon precursor phase to graphene
nucleation which coexists with small graphene domains. This precursor phase is
made of C aggregates with different size, shape and local ordering which are
not fully sp2 hybridized. In some atomic size regions these aggregates show a
linear arrangement of atoms as well as the first signature of the hexagonal
structure of graphene. The carbon precursor phase evolves in graphene domains
through an ordering process, associated to a re-arrangement of the Ge surface
morphology. This surface structuring represents the embryo stage of the
hills-and-valleys faceting featured by the Ge(001) surface for longer
deposition times, when the graphene domains coalesce to form a single layer
graphene film
Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction
Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface upon thermal annealing. Furthermore, using first-principle calculations, we build a model that successfully reproduces the experimental observations. Since the ability to modify graphene electronic properties is of fundamental importance when it comes to applications, our results provide an important contribution toward the integration of graphene with conventional semiconductors
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
By combining scanning probe microscopy with Raman and x-ray photoelectron
spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a
function of the deposition temperature in close proximity to the Ge melting
point, highlighting an abrupt change of the graphene's quality, morphology,
electronic properties and growth mode at 930 degrees. We attribute this
discontinuity to the incomplete surface melting of the Ge substrate and show
how incomplete melting explains a variety of diverse and long-debated peculiar
features of the graphene/Ge(001), including the characteristic nanostructuring
of the Ge substrate induced by graphene overgrowth. We find that the
quasi-liquid Ge layer formed close to 930 degrees is fundamental to obtain
high-quality graphene, while a temperature decrease of 10 degrees already
results in a wrinkled and defective graphene film.Comment: in pres
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering
In this manuscript, we develop a generalized theory for the scattering process produced by interface roughness on charge carriers that is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape of Ge/Ge-Si heterointerfaces obtained by atom probe tomography, we are able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration. To show the relevance of our generalized scattering model in the physics of semiconductor devices, we implement it in a nonequilibrium Green's function simulation platform to assess the performance of a Ge/Si-Ge-based terahertz quantum cascade laser
Driving with temperature the synthesis of graphene films on Ge(110)
We systematically investigate the chemical vapor deposition growth of
graphene on Ge(110) as a function of the deposition temperature close to the Ge
melting point. By merging spectroscopic and morphological information, we find
that the quality of graphene films depends critically on the growth temperature
improving significantly by increasing this temperature in the 910-930 {\deg}C
range. We correlate the abrupt improvement of the graphene quality to the
formation of a quasi-liquid Ge surface occurring in the same temperature range,
which determines increased atom diffusivity and sublimation rate. Being
observed for diverse Ge orientations, this process is of general relevance for
graphene synthesis on Ge
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells
We study radiative relaxation at terahertz frequencies in n-type Ge/SiGe quantum wells, optically pumped with a terahertz free electron laser. Two wells coupled through a tunneling barrier are designed to operate as a three-level laser system with non-equilibrium population generated by optical pumping around the 1→3 intersubband transition at 10 THz. The non-equilibrium subband population dynamics are studied by absorption-saturation measurements and compared to a numerical model. In the emission spectroscopy experiment, we observed a photoluminescence peak at 4 THz, which can be attributed to the 3→2 intersubband transition with possible contribution from the 2→1 intersubband transition. These results represent a step towards silicon-based integrated terahertz emitters
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