Influence of the InAs Coverage on the Performance of Submonolayer-Quantum-Dot Infrared Photodetectors Grown with a (2×4) Surface Reconstruction

Two infrared photodetectors based on submonolayer quantum dots, having a different InAs coverage of 35% and 50%, were grown, processed and tested. The detector with the larger coverage yielded a specific detectivity of 1.13×10 11 cm Hz 1/2 W -1 at 12K, which is among the highest values reported in the literature for that kind of device