Dynamic Control of Metamaterials at Terahertz Frequencies

Thesis advisor: Willie J. PadillaProgress in the field of metamaterials has started coming to a point where the field may finally begin to emerge as a viable solution to many electromagnetic challenges facing the community. No where is that more true then at terahertz frequencies where there lies an immense opportunity for growth. The development of mature technologies within this region of the electromagnetic spectrum would provide a valuable resource to become available for a multitude of applications. In order to achieve this, the necessary first steps of identifying viable materials and paths to integrate these with metamaterials will need to be completed. In this dissertation, we examine several different paths to achieve dynamic metamaterial electromagnetic response at terahertz frequencies, and demonstrate several paths to package these devices into imaging systems. In Chapter 1, we introduce the basic theory and design principles of metamaterials. We also describe the experimental techniques involved in the study of terahertz metamaterials. Chapter 2 presents a computational and experimental study investigating the integration of high electron mobility transistors with metamaterials allowing for high speed modulation of incident terahertz radiation. In Chapters 3 and 4, we investigate several different paths to create tunable terahertz metamaterial absorbers. Chapter 3 presents an investigation where we encapsulate a metametarial absorber unit cell with liquid crystals. We study both computationally and experimentally the tuning mechanism of the absorber as the liquid crystal refractive index is controlled as a function of the applied electric field strength and modulation frequency. In Chapter 4, we form a doped semiconducting metamaterial spatial light modulator with multi-color super-pixels composed of arrays of electronically controlled terahertz metamaterial absorbers. We computationally and experimentally study the independent tunability of each pixel in the spatial array and demonstrate high speed modulation. Chapter 5 introduces a multiplex imaging approach by using a terahertz spatial light modulator to enable terahertz imaging with a single pixel detector. We demonstrate the capability for high speed image acquisition, currently only limited by the commerical software used to reconfigure the spatial masks. We also configure the system to capture high fidelity images of varying complexity. In Chapter 6, we show how a metamaterial absorber can be implemented into a detector focal plane array for high sensitivity, low mutual coupling, and broad angle performance. Finally, we summarize in Chapter 7 the achievments of the research presented and highlight the direction of future work.Thesis (PhD) — Boston College, 2013.Submitted to: Boston College. Graduate School of Arts and Sciences.Discipline: Physics

Control of the Scattering Properties of Complex Systems By Means of Tunable Metasurfaces

We demonstrate the ability to control the scattering properties of a two-dimensional wave-chaotic microwave billiard through the use of tunable metasurfaces located on the interior walls of the billiard. The complex reflection coefficient of the metasurfaces can be varied by applying a DC voltage bias to varactor diodes on mushroom-shaped resonant patches, and this proves to be very effective at perturbing the eigenmodes of the cavity. Placing multiple metasurfaces inside the cavity allows us to engineer desired scattering conditions, such as coherent perfect absorption (CPA), by actively manipulating the poles and zeros of the scattering matrix through the application of multiple voltage biases. We demonstrate the ability to create on-demand CPA conditions at a specific frequency, and document the near-null of output power as a function of four independent parameters tuned through the CPA point. A remarkably low output-to-input power ratio of $\frac{P_{out}}{P_{in}} = 3.71 \times 10^{-8}$ is achieved near the CPA point at 8.54 GHz

Fermi-surface topologies and low-temperature phases of the filled skutterudite compounds CeOs4Sb12 and NdOs4Sb12

MHz conductivity, torque magnetometer and magnetization measurements are reported on single crystals of CeOs4Sb12 and NdOs4Sb12 using temperatures down to 0.5 K and magnetic fields of up to 60 tesla. The field-orientation dependence of the de Haas-van Alphen and Shubnikov-de Haas oscillations is deduced by rotating the samples about the [010] and [0¯11] directions. The results indicate that NdOs4Sb12 has a similar Fermi surface topology to that of the unusual superconductor PrOs4Sb12, but with significantly smaller effective masses, supporting the importance of local phonon modes in contributing to the low-temperature heat capacity of NdOs4Sb12. By contrast, CeOs4Sb12 undergoes a field-induced transition from an unusual semimetal into a high-field, hightemperature state characterized by a single, almost spherical Fermi-surface section. The behavior of the phase boundary and comparisons with models of the bandstructure lead us to propose that the field-induced phase transition in CeOs4Sb12 is similar in origin to the well-known α − γ transition in Ce and its alloys

Electronic And Thermally Tunable Infrared Metamaterial Absorbers

In this paper, we report a computational and experimental study using tunable infrared (IR) metamaterial absorbers (MMAs) to demonstrate frequency tunable (7%) and amplitude modulation (61%) designs. The dynamic tuning of each structure was achieved through the addition of an active material - liquid crystals (LC) or vanadium dioxide (VO2) - within the unit cell of the MMA architecture. In both systems, an applied stimulus (electric field or temperature) induced a dielectric change in the active material and subsequent variation in the absorption and reflection properties of the MMA in the mid- to long-wavelength region of the IR (MWIR and LWIR, respectively). These changes were observed to be reversible for both systems and dynamic in the LC-based structure

Experimental demonstration of frequency-agile terahertz metamaterials

Metamaterials exhibit numerous novel effects1–5 and operate over a large portion of the electromagnetic spectrum6–10. Metamaterial devices based on these effects include gradientindex lenses11,12, modulators for terahertz radiation13–15 and compact waveguides16. The resonant nature of metamaterials results in frequency dispersion and narrow bandwidth operation where the centre frequency is fixed by the geometry and dimensions of the elements comprising the metamaterial composite. The creation of frequency-agile metamaterials would extend the spectral range over which devices function and, further, enable the manufacture of new devices such as dynamically tunable notch filters. Here, we demonstrate such frequency-agile metamaterials operating in the far-infrared by incorporating semiconductors in critical regions of metallic split-ring resonators. For this first-generation device, externa

Data for Fermi-surface topologies and low-temperature phases of the filled skutterudite compounds CeOs4Sb12 and NdOs4Sb12

MHz conductivity, torque magnetometer and magnetization measurements are reported on single crystals of CeOs4Sb12 and NdOs4Sb12 using temperatures down to 0.5 K and magnetic fields of up to 60 tesla. The field-orientation dependence of the de Haas-van Alphen and Shubnikov-de Haas oscillations is deduced by rotating the samples about the [010] and [0¯11] directions. The results indicate that NdOs4Sb12 has a similar Fermi surface topology to that of the unusual superconductor PrOs4Sb12, but with significantly smaller effective masses, supporting the importance of local phonon modes in contributing to the low-temperature heat capacity of NdOs4Sb12. By contrast, CeOs4Sb12 undergoes a field-induced transition from an unusual semimetal into a high-field, hightemperature state characterized by a single, almost spherical Fermi-surface section. The behavior of the phase boundary and comparisons with models of the bandstructure lead us to propose that the field-induced phase transition in CeOs4Sb12 is similar in origin to the well-known α − γ transition in Ce and its alloys

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class