6,392 research outputs found
Interdot Coulomb repulsion effect on the charge transport of parallel double single electron transistors
The charge transport behaviors of parallel double single electron transistors
(SETs) are investigated by the Anderson model with two impurity levels. The
nonequilibrium Keldysh Green's technique is used to calculate the
current-voltage characteristics of system. For SETs implemented by quantum dots
(QDs) embedded into a thin layer, the interdot Coulomb repulsion is
more important than the interdot electron hopping as a result of high potential
barrier height between QDs and . We found that the interdot Coulomb
repulsion not onlyleads to new resonant levels, but also creates negative
differential conductances.Comment: 12 pages, 7 figure
Light-emitting current of electrically driven single-photon sources
The time-dependent tunnelling current arising from the electron-hole
recombination of exciton state is theoretically studied using the
nonequilibrium Green's function technique and the Anderson model with two
energy levels. The charge conservation and gauge invariance are satisfied in
the tunnelling current. Apart from the classical capacitive charging and
discharging behavior, interesting oscillations superimpose on the tunnelling
current for the applied rectangular pulse voltage.Comment: 14 pages, 5 figure
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