Fermi-surface topologies and low-temperature phases of the filled skutterudite compounds CeOs4Sb12 and NdOs4Sb12

MHz conductivity, torque magnetometer and magnetization measurements are reported on single crystals of CeOs4Sb12 and NdOs4Sb12 using temperatures down to 0.5 K and magnetic fields of up to 60 tesla. The field-orientation dependence of the de Haas-van Alphen and Shubnikov-de Haas oscillations is deduced by rotating the samples about the [010] and [0¯11] directions. The results indicate that NdOs4Sb12 has a similar Fermi surface topology to that of the unusual superconductor PrOs4Sb12, but with significantly smaller effective masses, supporting the importance of local phonon modes in contributing to the low-temperature heat capacity of NdOs4Sb12. By contrast, CeOs4Sb12 undergoes a field-induced transition from an unusual semimetal into a high-field, hightemperature state characterized by a single, almost spherical Fermi-surface section. The behavior of the phase boundary and comparisons with models of the bandstructure lead us to propose that the field-induced phase transition in CeOs4Sb12 is similar in origin to the well-known α − γ transition in Ce and its alloys

Experimental demonstration of frequency-agile terahertz metamaterials

Metamaterials exhibit numerous novel effects1–5 and operate over a large portion of the electromagnetic spectrum6–10. Metamaterial devices based on these effects include gradientindex lenses11,12, modulators for terahertz radiation13–15 and compact waveguides16. The resonant nature of metamaterials results in frequency dispersion and narrow bandwidth operation where the centre frequency is fixed by the geometry and dimensions of the elements comprising the metamaterial composite. The creation of frequency-agile metamaterials would extend the spectral range over which devices function and, further, enable the manufacture of new devices such as dynamically tunable notch filters. Here, we demonstrate such frequency-agile metamaterials operating in the far-infrared by incorporating semiconductors in critical regions of metallic split-ring resonators. For this first-generation device, externa

Data for Fermi-surface topologies and low-temperature phases of the filled skutterudite compounds CeOs4Sb12 and NdOs4Sb12

MHz conductivity, torque magnetometer and magnetization measurements are reported on single crystals of CeOs4Sb12 and NdOs4Sb12 using temperatures down to 0.5 K and magnetic fields of up to 60 tesla. The field-orientation dependence of the de Haas-van Alphen and Shubnikov-de Haas oscillations is deduced by rotating the samples about the [010] and [0¯11] directions. The results indicate that NdOs4Sb12 has a similar Fermi surface topology to that of the unusual superconductor PrOs4Sb12, but with significantly smaller effective masses, supporting the importance of local phonon modes in contributing to the low-temperature heat capacity of NdOs4Sb12. By contrast, CeOs4Sb12 undergoes a field-induced transition from an unusual semimetal into a high-field, hightemperature state characterized by a single, almost spherical Fermi-surface section. The behavior of the phase boundary and comparisons with models of the bandstructure lead us to propose that the field-induced phase transition in CeOs4Sb12 is similar in origin to the well-known α − γ transition in Ce and its alloys

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class