Direct patterning of complex oxides by pulsed laser deposition through stencils

The possibilities to grow isolated structures of complex oxides by pulsed laser\ud deposition through stencils were investigated. A stencil consisting of a SiN membrane with apertures of several hundred nanometers embedded in a Si chip is placed in front of a heated substrate (up to 750 degrees Celsius). Deposition through these apertures results in resistless, direct patterning by local deposition of complex oxides like ferroelectric Lead Zirconate Titanate. The created isolated structures were analyzed by AFM imaging. Under-deposition, in this work called broadening, is inevitable during stencil deposition and is depending on deposition parameters, especially pressure. Different causes of broadening are mapped and discussed

Step structure of vicinal Ge (001) surfaces

The microscopic details of the step morphology of vicinal Ge(001 ) surfaces are analyzed on an atomic level using scanning tunnelling microscopy. Despite the strong correspondence to vicinal Si (001) surfaces, the step structure of the vicinal Ge(001) surface exhibits some significant differences. Rebonded, as well as nonbonded SB step edges, are observed and, related to the occurrence of both configurations, kinks with a minimum length of a0( ≈ 4 Å) do occur. Kinks in SB rebonded step edges can be regarded as independent excitations whereas for kinks in SB nonbonded step edges this is definitely not the case. Occasionally dimers are found at the SB steps, which are located just in between two dimer rows of the upper terrace. Finally, for the first time a ferromagnetic-like coupling between buckled dimers in the same row is observed close to step edges.\ud \u

Transmission Electron Microscopy on Interface Engineered Superconducting Thin Films

Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2O buffer layer can avoid a variable interface configuration in YBa2Cu3O7 thin films grown on SrTiO3. The growth can also be controlled at an atomic level by using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0 85La0 15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer

Electrodeposition in capillaries: bottom-up micro- and nanopatterning of functional materials on conductive substrates

A cost-effective and versatile methodology for bottom-up patterned growth of inorganic and metallic materials on the micro- and nanoscale is presented. Pulsed electrodeposition was employed to deposit arbitrary patterns of Ni, ZnO, and FeO(OH) of high quality, with lateral feature sizes down to 200–290 nm. The pattern was defined by an oxygen plasma-treated patterned PDMS mold in conformal contact with a conducting substrate and immersed in an electrolyte solution, so that the solid phases were deposited from the solution in the channels of the patterned mold. It is important that the distance between the entrance of the channels, and the location where deposition is needed, is kept limited. The as-formed patterns were characterized by high resolution scanning electron microscope, energy-dispersive X-ray analysis, atomic force microscopy, and X-ray diffraction

The impedance of thin dense oxide cathodes

The impedance is derived for a dense layer electrode of a mixed conducting oxide, assuming that the electronic resistance may be ignored. The influence of layer thickness, oxygen diffusion and surface exchange rate on the ‘General Finite Length Diffusion’ expression is evaluated. The thickness dependence is tested for a series of thin, dense layer electrodes of La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) deposited on a Ce0.9Gd0.1O1.95 electrolyte by pulsed laser deposition (PLD). A minimum thickness is required to avoid the influence of contact points of the contacting Pt-gauze and sheet resistance, which is about 1 μm for the studied LSCF electrodes. LEISS surface analysis indicates that PLD deposition process easily leads to a significant Cr contamination of the LSCF surface. Electrochemical impedance spectroscopy analysis indicates that the influence on the exchange rate of this Cr-contamination is still negligible