Symbol Parameter Conditions Min Typ Max Unit

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits � Q101 compliant � Suitable for standard level gate drive sources � Suitable for thermally demanding environments due to 175 °C ratin

Dynamic characteristics

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits � Higher operating power due to low thermal resistance � Suitable for high frequency applications due to fast switching characteristics 1.3 Application

Static characteristics

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits � Allows responsive temperature monitoring due to integrated temperature sensor � Low conduction losses due to low on-state resistance � Q101 compliant 1.3 Applications � 12 V and 24 V high power motor drives � Automotive and general purpose power switchin

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits � High efficiency due to low switching and conduction losses � Suitable for standard level gate driv

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits � High efficiency due to low switching and conduction losses � Suitable for logic level gate drive source

Static characteristics

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits � High efficiency due to low switching and conduction losses � Isolated package � Suitable for standard level gate driv

Symbol Parameter Conditions Min Typ Max Unit

Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits � High efficiency due to low switching and conduction losses � Suitable for logic level gate drive source

Static characteristics

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits � High efficiency due to low switching and conduction losses � Isolated package � Suitable for standard level gate driv