11,499 research outputs found

    Model for hypernucleus production in heavy ion collisions

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    We estimate the production cross sections of hypernuclei in projectile like fragment (PLF) in heavy ion collisions. The discussed scenario for the formation cross section of hypernucleus is: (a) Lambda particles are produced in the participant region but have a considerable rapidity spread and (b) Lambda with rapidity close to that of the PLF and total momentum (in the rest system of PLF) up to Fermi motion can then be trapped and produce hypernuclei. The process (a) is considered here within Heavy Ion Jet Interacting Generator HIJING-BBbar model and the process (b) in the canonical thermodynamic model (CTM). We estimate the production cross-sections for light hypernuclei for C + C at 3.7 GeV total nucleon-nucleon center of mass energy and for Ne+Ne and Ar+Ar collisions at 5.0 GeV. By taking into account explicitly the impact parameter dependence of the colliding systems, it is found that the cross section is different from that predicted by the coalescence model and large discrepancy is obtained for 6_He and 9_Be hypernuclei.Comment: 9 pages, 4 figures, 3 tables, revtex4, added reference

    Electron-Hole Asymmetry in the Electron-phonon Coupling in Top-gated Phosphorene Transistor

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    Using in-situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that its phonons with Ag_g symmetry depend much more strongly on concentration of electrons than that of holes, while the phonons with Bg_g symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving π\pi and σ\sigma bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices
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